Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films
In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10695762/ |
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| author | Jinyeong Lee Jaewook Jeong |
| author_facet | Jinyeong Lee Jaewook Jeong |
| author_sort | Jinyeong Lee |
| collection | DOAJ |
| description | In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO thin films. The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials. |
| format | Article |
| id | doaj-art-83b4f8bed3624e199c987f533bb797a1 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-83b4f8bed3624e199c987f533bb797a12025-01-29T00:00:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011291291810.1109/JEDS.2024.346830010695762Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-FilmsJinyeong Lee0https://orcid.org/0009-0002-1890-2873Jaewook Jeong1https://orcid.org/0000-0002-3180-2167School of Information and Communication Engineering, Chungbuk National University, Cheongju, Chungbuk, South KoreaSchool of Information and Communication Engineering, Chungbuk National University, Cheongju, Chungbuk, South KoreaIn this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO thin films. The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.https://ieeexplore.ieee.org/document/10695762/Amorphous ZnOInZnO and GaZnO layerPL emission peaksquantum confinement effectmorphological connectivity |
| spellingShingle | Jinyeong Lee Jaewook Jeong Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films IEEE Journal of the Electron Devices Society Amorphous ZnO InZnO and GaZnO layer PL emission peaks quantum confinement effect morphological connectivity |
| title | Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films |
| title_full | Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films |
| title_fullStr | Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films |
| title_full_unstemmed | Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films |
| title_short | Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films |
| title_sort | correlation between quantum confinement effect and characteristics of thin film transistors in solution processed oxide based thin films |
| topic | Amorphous ZnO InZnO and GaZnO layer PL emission peaks quantum confinement effect morphological connectivity |
| url | https://ieeexplore.ieee.org/document/10695762/ |
| work_keys_str_mv | AT jinyeonglee correlationbetweenquantumconfinementeffectandcharacteristicsofthinfilmtransistorsinsolutionprocessedoxidebasedthinfilms AT jaewookjeong correlationbetweenquantumconfinementeffectandcharacteristicsofthinfilmtransistorsinsolutionprocessedoxidebasedthinfilms |