Raman Amplifier Based on Amorphous Silicon Nanoparticles
The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant r...
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Format: | Article |
Language: | English |
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Wiley
2012-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2012/254946 |
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author | M. A. Ferrara I. Rendina S. N. Basu L. Dal Negro L. Sirleto |
author_facet | M. A. Ferrara I. Rendina S. N. Basu L. Dal Negro L. Sirleto |
author_sort | M. A. Ferrara |
collection | DOAJ |
description | The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers. |
format | Article |
id | doaj-art-8373829d256b44b2b6eab8bab0acd060 |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2012-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-8373829d256b44b2b6eab8bab0acd0602025-02-03T01:31:01ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/254946254946Raman Amplifier Based on Amorphous Silicon NanoparticlesM. A. Ferrara0I. Rendina1S. N. Basu2L. Dal Negro3L. Sirleto4Institute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyInstitute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyDivision of Materials Science and Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, USADepartment of Electrical & Computer Engineering, Boston University, 8 Saint Mary's Street, Boston, MA 02215-2421, USAInstitute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyThe observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.http://dx.doi.org/10.1155/2012/254946 |
spellingShingle | M. A. Ferrara I. Rendina S. N. Basu L. Dal Negro L. Sirleto Raman Amplifier Based on Amorphous Silicon Nanoparticles International Journal of Photoenergy |
title | Raman Amplifier Based on Amorphous Silicon Nanoparticles |
title_full | Raman Amplifier Based on Amorphous Silicon Nanoparticles |
title_fullStr | Raman Amplifier Based on Amorphous Silicon Nanoparticles |
title_full_unstemmed | Raman Amplifier Based on Amorphous Silicon Nanoparticles |
title_short | Raman Amplifier Based on Amorphous Silicon Nanoparticles |
title_sort | raman amplifier based on amorphous silicon nanoparticles |
url | http://dx.doi.org/10.1155/2012/254946 |
work_keys_str_mv | AT maferrara ramanamplifierbasedonamorphoussiliconnanoparticles AT irendina ramanamplifierbasedonamorphoussiliconnanoparticles AT snbasu ramanamplifierbasedonamorphoussiliconnanoparticles AT ldalnegro ramanamplifierbasedonamorphoussiliconnanoparticles AT lsirleto ramanamplifierbasedonamorphoussiliconnanoparticles |