Raman Amplifier Based on Amorphous Silicon Nanoparticles

The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant r...

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Main Authors: M. A. Ferrara, I. Rendina, S. N. Basu, L. Dal Negro, L. Sirleto
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2012/254946
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author M. A. Ferrara
I. Rendina
S. N. Basu
L. Dal Negro
L. Sirleto
author_facet M. A. Ferrara
I. Rendina
S. N. Basu
L. Dal Negro
L. Sirleto
author_sort M. A. Ferrara
collection DOAJ
description The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.
format Article
id doaj-art-8373829d256b44b2b6eab8bab0acd060
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2012-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-8373829d256b44b2b6eab8bab0acd0602025-02-03T01:31:01ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/254946254946Raman Amplifier Based on Amorphous Silicon NanoparticlesM. A. Ferrara0I. Rendina1S. N. Basu2L. Dal Negro3L. Sirleto4Institute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyInstitute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyDivision of Materials Science and Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, USADepartment of Electrical & Computer Engineering, Boston University, 8 Saint Mary's Street, Boston, MA 02215-2421, USAInstitute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, ItalyThe observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.http://dx.doi.org/10.1155/2012/254946
spellingShingle M. A. Ferrara
I. Rendina
S. N. Basu
L. Dal Negro
L. Sirleto
Raman Amplifier Based on Amorphous Silicon Nanoparticles
International Journal of Photoenergy
title Raman Amplifier Based on Amorphous Silicon Nanoparticles
title_full Raman Amplifier Based on Amorphous Silicon Nanoparticles
title_fullStr Raman Amplifier Based on Amorphous Silicon Nanoparticles
title_full_unstemmed Raman Amplifier Based on Amorphous Silicon Nanoparticles
title_short Raman Amplifier Based on Amorphous Silicon Nanoparticles
title_sort raman amplifier based on amorphous silicon nanoparticles
url http://dx.doi.org/10.1155/2012/254946
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AT irendina ramanamplifierbasedonamorphoussiliconnanoparticles
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AT ldalnegro ramanamplifierbasedonamorphoussiliconnanoparticles
AT lsirleto ramanamplifierbasedonamorphoussiliconnanoparticles