Leshan, Q., Zhikang, W., Yan, C., Chengzhan, L., & Yun, B. Influence and reinforcement of gate bias on total dose effect of SiC MOSFET. Editorial Department of Electric Drive for Locomotives.
Chicago Style (17th ed.) CitationLeshan, QIU, WU Zhikang, CHEN Yan, LI Chengzhan, and BAI Yun. Influence and Reinforcement of Gate Bias on Total Dose Effect of SiC MOSFET. Editorial Department of Electric Drive for Locomotives.
MLA (9th ed.) CitationLeshan, QIU, et al. Influence and Reinforcement of Gate Bias on Total Dose Effect of SiC MOSFET. Editorial Department of Electric Drive for Locomotives.
Warning: These citations may not always be 100% accurate.