Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing
Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead‐free halide perovskite K2CuBr3, as a novel material candidate for the resistive switc...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400804 |
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| author | Zijian Feng Jiyun Kim Jie Min Peiyuan Guan Shuo Zhang Xinwei Guan Tingting Mei Tianxu Huang Chun‐Ho Lin Long Hu Fandi Chen Zhi Li Jiabao Yi Tom Wu Dewei Chu |
| author_facet | Zijian Feng Jiyun Kim Jie Min Peiyuan Guan Shuo Zhang Xinwei Guan Tingting Mei Tianxu Huang Chun‐Ho Lin Long Hu Fandi Chen Zhi Li Jiabao Yi Tom Wu Dewei Chu |
| author_sort | Zijian Feng |
| collection | DOAJ |
| description | Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead‐free halide perovskite K2CuBr3, as a novel material candidate for the resistive switching (RS) devices, which features only earth‐abundant elements, K, Cu, and Br. To the knowledge, this material is the first low‐dimensional halide perovskite with exceptionally low production costs and minimal environmental impact. Owing to the unique 1D carrier transport along the Cu─Br networks, the K2CuBr3 RS device exhibits excellent bipolar switching behavior, with an On/Off window of 105 and a retention time of over 1000 s. The K2CuBr3 RS devices can also act as artificial synapses to transmit various forms of synaptic plasticities, and their integration into a perceptron artificial neural network can deliver a high algorithm accuracy of 93% for image recognition. Overall, this study underscores the promising attributes of K2CuBr3 for the future development of memory storage and neuromorphic computing, leveraging its distinct material properties and economic benefits. |
| format | Article |
| id | doaj-art-81b6e004372a47feb4f82c8e3d6b94e2 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-81b6e004372a47feb4f82c8e3d6b94e22025-08-20T02:24:22ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-06-01118n/an/a10.1002/aelm.202400804Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic ComputingZijian Feng0Jiyun Kim1Jie Min2Peiyuan Guan3Shuo Zhang4Xinwei Guan5Tingting Mei6Tianxu Huang7Chun‐Ho Lin8Long Hu9Fandi Chen10Zhi Li11Jiabao Yi12Tom Wu13Dewei Chu14School of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaGlobal Innovative Centre for Advanced Nanomaterials School of Engineering College of Engineering Science and Environment The University of Newcastle Callaghan NSW 2308 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaGlobal Innovative Centre for Advanced Nanomaterials School of Engineering College of Engineering Science and Environment The University of Newcastle Callaghan NSW 2308 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaSchool of Materials Science and Engineering University of New South Wales Sydney NSW 2052 AustraliaAbstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead‐free halide perovskite K2CuBr3, as a novel material candidate for the resistive switching (RS) devices, which features only earth‐abundant elements, K, Cu, and Br. To the knowledge, this material is the first low‐dimensional halide perovskite with exceptionally low production costs and minimal environmental impact. Owing to the unique 1D carrier transport along the Cu─Br networks, the K2CuBr3 RS device exhibits excellent bipolar switching behavior, with an On/Off window of 105 and a retention time of over 1000 s. The K2CuBr3 RS devices can also act as artificial synapses to transmit various forms of synaptic plasticities, and their integration into a perceptron artificial neural network can deliver a high algorithm accuracy of 93% for image recognition. Overall, this study underscores the promising attributes of K2CuBr3 for the future development of memory storage and neuromorphic computing, leveraging its distinct material properties and economic benefits.https://doi.org/10.1002/aelm.2024008041Dartificial synapsememoryperovskiteresistive switching |
| spellingShingle | Zijian Feng Jiyun Kim Jie Min Peiyuan Guan Shuo Zhang Xinwei Guan Tingting Mei Tianxu Huang Chun‐Ho Lin Long Hu Fandi Chen Zhi Li Jiabao Yi Tom Wu Dewei Chu Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing Advanced Electronic Materials 1D artificial synapse memory perovskite resistive switching |
| title | Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing |
| title_full | Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing |
| title_fullStr | Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing |
| title_full_unstemmed | Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing |
| title_short | Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing |
| title_sort | harnessing earth abundant lead free halide perovskite for resistive switching memory and neuromorphic computing |
| topic | 1D artificial synapse memory perovskite resistive switching |
| url | https://doi.org/10.1002/aelm.202400804 |
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