Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress
Molybdenum disulfide (MoS2) holds great potential in a wide range of applications, including electronics, photodetectors, light-emitting diodes (LEDs), and solar cells due to its unique two-dimensional (2D) structure. This structure enables innovative functionalities, particularly in flexible and we...
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2025-01-01
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author | Jhih H. Liang Mehdi Rouhani J. David Schall Takaaki Sato Christopher Muratore Nicholas R. Glavin Robert W. Carpick Yeau-Ren Jeng |
author_facet | Jhih H. Liang Mehdi Rouhani J. David Schall Takaaki Sato Christopher Muratore Nicholas R. Glavin Robert W. Carpick Yeau-Ren Jeng |
author_sort | Jhih H. Liang |
collection | DOAJ |
description | Molybdenum disulfide (MoS2) holds great potential in a wide range of applications, including electronics, photodetectors, light-emitting diodes (LEDs), and solar cells due to its unique two-dimensional (2D) structure. This structure enables innovative functionalities, particularly in flexible and wearable technologies. However, a significant knowledge gap remains regarding MoS2's interfacial adhesion, a critical aspect for advancing next-generation devices. To address this, we conducted a comprehensive study investigating the interaction forces originating from the bonding between atoms that govern the adhesion of ultra-thin 2D MoS2. Our pioneering in situ experiments, utilizing TEM-based nanoindentation, provided precise imaging and force monitoring of MoS2's interaction with a diamond. We employed four MoS2-coated AFM tips with varying radii and preparation methods, with films prepared on two Si wafers subjected to different oxidation protocols. Our findings, validated by Raman and X-ray photoelectron spectroscopy, reveal unique insights into MoS2's interfacial behavior. We observed a decreased structural order in MoS2 on sharper tips, particularly those without pre-deposition oxidation. These results underscore the importance of residual stress between the MoS2 film and substrate and the influence of curvature-induced residual stress in fostering less-ordered MoS2 structures with heightened work of adhesion. Importantly, this is the first study to report the work of adhesion for MoS2-diamond contact. Our findings highlight the crucial role of covalent bonding at contact points in the material transfer processes involving 2D materials. This is a critical insight for developing precise and reliable methods for manipulating 2D materials, which could significantly advance our understanding and application of materials science, particularly in nanotechnology and device fabrication. |
format | Article |
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institution | Kabale University |
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language | English |
publishDate | 2025-01-01 |
publisher | Elsevier |
record_format | Article |
series | Applied Surface Science Advances |
spelling | doaj-art-8156d860a3f2482d82246ce2329becc32025-01-29T05:02:10ZengElsevierApplied Surface Science Advances2666-52392025-01-0125100686Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stressJhih H. Liang0Mehdi Rouhani1J. David Schall2Takaaki Sato3Christopher Muratore4Nicholas R. Glavin5Robert W. Carpick6Yeau-Ren Jeng7Mechanical Engineering Department, National Chung Cheng University, 168 University Road, Ming-Hsiung Township, Chia-Yi 62102, TaiwanDepartment of Biomedical Engineering, National Cheng Kung University, 1 University Road, Tainan City 70101, TaiwanDepartment of Mechanical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411, USADepartment of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, 220 S. 33rd St., Philadelphia, PA 19104-6315, USADepartment of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469, USAMaterials and Manufacturing Directorate, US Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USADepartment of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, 220 S. 33rd St., Philadelphia, PA 19104-6315, USAMechanical Engineering Department, National Chung Cheng University, 168 University Road, Ming-Hsiung Township, Chia-Yi 62102, Taiwan; Department of Biomedical Engineering, National Cheng Kung University, 1 University Road, Tainan City 70101, Taiwan; Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (NCKU), Tainan 70101, Taiwan; Corresponding author.Molybdenum disulfide (MoS2) holds great potential in a wide range of applications, including electronics, photodetectors, light-emitting diodes (LEDs), and solar cells due to its unique two-dimensional (2D) structure. This structure enables innovative functionalities, particularly in flexible and wearable technologies. However, a significant knowledge gap remains regarding MoS2's interfacial adhesion, a critical aspect for advancing next-generation devices. To address this, we conducted a comprehensive study investigating the interaction forces originating from the bonding between atoms that govern the adhesion of ultra-thin 2D MoS2. Our pioneering in situ experiments, utilizing TEM-based nanoindentation, provided precise imaging and force monitoring of MoS2's interaction with a diamond. We employed four MoS2-coated AFM tips with varying radii and preparation methods, with films prepared on two Si wafers subjected to different oxidation protocols. Our findings, validated by Raman and X-ray photoelectron spectroscopy, reveal unique insights into MoS2's interfacial behavior. We observed a decreased structural order in MoS2 on sharper tips, particularly those without pre-deposition oxidation. These results underscore the importance of residual stress between the MoS2 film and substrate and the influence of curvature-induced residual stress in fostering less-ordered MoS2 structures with heightened work of adhesion. Importantly, this is the first study to report the work of adhesion for MoS2-diamond contact. Our findings highlight the crucial role of covalent bonding at contact points in the material transfer processes involving 2D materials. This is a critical insight for developing precise and reliable methods for manipulating 2D materials, which could significantly advance our understanding and application of materials science, particularly in nanotechnology and device fabrication.http://www.sciencedirect.com/science/article/pii/S2666523924001144In-situ temMoS22DAdhesionNanoindentationRaman spectroscopy |
spellingShingle | Jhih H. Liang Mehdi Rouhani J. David Schall Takaaki Sato Christopher Muratore Nicholas R. Glavin Robert W. Carpick Yeau-Ren Jeng Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress Applied Surface Science Advances In-situ tem MoS2 2D Adhesion Nanoindentation Raman spectroscopy |
title | Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress |
title_full | Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress |
title_fullStr | Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress |
title_full_unstemmed | Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress |
title_short | Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress |
title_sort | adhesion induced mos2 layer transfer via in situ tem nanoindentation effects of curvature and substrate mediated residual stress |
topic | In-situ tem MoS2 2D Adhesion Nanoindentation Raman spectroscopy |
url | http://www.sciencedirect.com/science/article/pii/S2666523924001144 |
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