Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content
Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202301016 |
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| author | Jith Sarker Prachi Garg Abrar Rauf Ahsiur Rahman Nirjhar Hsien‐Lien Huang Menglin Zhu A. F. M. Anhar Uddin Bhuiyan Lingyu Meng Hongping Zhao Jinwoo Hwang Eric Osei‐Agyemang Saquib Ahmed Baishakhi Mazumder |
| author_facet | Jith Sarker Prachi Garg Abrar Rauf Ahsiur Rahman Nirjhar Hsien‐Lien Huang Menglin Zhu A. F. M. Anhar Uddin Bhuiyan Lingyu Meng Hongping Zhao Jinwoo Hwang Eric Osei‐Agyemang Saquib Ahmed Baishakhi Mazumder |
| author_sort | Jith Sarker |
| collection | DOAJ |
| description | Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. In this work, an investigation of microscopic and spectroscopic characteristics of (100), (2¯01), (010)–(AlxGa1–x)2O3 films is conducted. A combination of scanning transmission electron microscopy, atom probe tomography (APT), and first‐principle calculations (DFT) is performed. The findings reveal consistent in‐plane chemical homogeneity in lower aluminum content (x = 0.2) films. However, higher aluminum content (x = 0.5), showed inhomogeneity in (100), (010)–(AlxGa1–x)2O3 films attributed to their spectroscopic properties. The study expanded APT's capabilities to determine Ga─O and Al─O bond lengths by mapping their ion‐pair separations in detector space. The change in ion‐pair separations is consistent with varying orientations, irrespective of aluminum content. DFT also demonstrated a similar trend, concluding that Ga─O and Al─O bonding energy has an inverse relationship with their bond length as crystallographic orientations vary. This systematic study of growth orientation dependence of (AlxGa1–x)2O3 films’ microscopic and spectroscopic properties will guide the development of new (100) and (2¯01)‐(AlxGa1–x)2O3 along with existing (010)–(AlxGa1–x)2O3 films. |
| format | Article |
| id | doaj-art-80526d14dae9443dbf292f9054ce58e3 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-80526d14dae9443dbf292f9054ce58e32025-01-20T13:56:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202301016Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum ContentJith Sarker0Prachi Garg1Abrar Rauf2Ahsiur Rahman Nirjhar3Hsien‐Lien Huang4Menglin Zhu5A. F. M. Anhar Uddin Bhuiyan6Lingyu Meng7Hongping Zhao8Jinwoo Hwang9Eric Osei‐Agyemang10Saquib Ahmed11Baishakhi Mazumder12Department of Materials Design and Innovation University at Buffalo‐SUNY Buffalo NY 14260 USADepartment of Materials Design and Innovation University at Buffalo‐SUNY Buffalo NY 14260 USADepartment of Materials and Metallurgical Engineering Bangladesh University of Engineering and Technology Dhaka 1000 BangladeshDepartment of Materials and Metallurgical Engineering Bangladesh University of Engineering and Technology Dhaka 1000 BangladeshDepartment of Materials Science and Engineering The Ohio State University Columbus OH 43210 USADepartment of Materials Science and Engineering The Ohio State University Columbus OH 43210 USADepartment of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USADepartment of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USADepartment of Materials Science and Engineering The Ohio State University Columbus OH 43210 USADepartment of Materials Science and Engineering The Ohio State University Columbus OH 43210 USADepartment of Materials Design and Innovation University at Buffalo‐SUNY Buffalo NY 14260 USADepartment of Engineering Technology SUNY Buffalo State University Buffalo NY 14222 USADepartment of Materials Design and Innovation University at Buffalo‐SUNY Buffalo NY 14260 USAAbstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. In this work, an investigation of microscopic and spectroscopic characteristics of (100), (2¯01), (010)–(AlxGa1–x)2O3 films is conducted. A combination of scanning transmission electron microscopy, atom probe tomography (APT), and first‐principle calculations (DFT) is performed. The findings reveal consistent in‐plane chemical homogeneity in lower aluminum content (x = 0.2) films. However, higher aluminum content (x = 0.5), showed inhomogeneity in (100), (010)–(AlxGa1–x)2O3 films attributed to their spectroscopic properties. The study expanded APT's capabilities to determine Ga─O and Al─O bond lengths by mapping their ion‐pair separations in detector space. The change in ion‐pair separations is consistent with varying orientations, irrespective of aluminum content. DFT also demonstrated a similar trend, concluding that Ga─O and Al─O bonding energy has an inverse relationship with their bond length as crystallographic orientations vary. This systematic study of growth orientation dependence of (AlxGa1–x)2O3 films’ microscopic and spectroscopic properties will guide the development of new (100) and (2¯01)‐(AlxGa1–x)2O3 along with existing (010)–(AlxGa1–x)2O3 films.https://doi.org/10.1002/admi.202301016atom probe tomographyfirst principle calculationsemiconductorultrawide‐bandgap material |
| spellingShingle | Jith Sarker Prachi Garg Abrar Rauf Ahsiur Rahman Nirjhar Hsien‐Lien Huang Menglin Zhu A. F. M. Anhar Uddin Bhuiyan Lingyu Meng Hongping Zhao Jinwoo Hwang Eric Osei‐Agyemang Saquib Ahmed Baishakhi Mazumder Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content Advanced Materials Interfaces atom probe tomography first principle calculation semiconductor ultrawide‐bandgap material |
| title | Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content |
| title_full | Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content |
| title_fullStr | Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content |
| title_full_unstemmed | Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content |
| title_short | Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content |
| title_sort | microscopic and spectroscopic investigation of alxga1 x 2o3 films unraveling the impact of growth orientation and aluminum content |
| topic | atom probe tomography first principle calculation semiconductor ultrawide‐bandgap material |
| url | https://doi.org/10.1002/admi.202301016 |
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