Impacts of capacitive current on electrolyte-gated graphene field-effect transistor arrays
We investigate the effect of gate-source current ( I _GS ) on variations in the Dirac point voltage ( V _DP ) in electrolyte-gated graphene field-effect transistor (EG-GFET) arrays through a time-resolved analysis of I _GS and an equivalent circuit model. Source/drain electrodes exposed to the elect...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adb125 |
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| Summary: | We investigate the effect of gate-source current ( I _GS ) on variations in the Dirac point voltage ( V _DP ) in electrolyte-gated graphene field-effect transistor (EG-GFET) arrays through a time-resolved analysis of I _GS and an equivalent circuit model. Source/drain electrodes exposed to the electrolyte induce a substantial capacitive current and a prolonged charging duration of the electric double-layer capacitance, which leads to a position-dependent V _DP variation relative to the gate electrode. The electrode-passivation alleviates the variation by significantly reducing I _GS and associated charging time. These findings offer critical insights for the design of integrated EG-GFET arrays. |
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| ISSN: | 1882-0786 |