Improved irradiation resistance of high entropy nanolaminates through interface engineering
Bi-phase interfacial engineering is an effective method for improving irradiation resistance, as interfaces play a critical role in defect generation and annihilation. In this work, molecular dynamics simulations are performed to investigate the evolution of the high entropy crystalline/amorphous la...
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| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Materials Futures |
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| Online Access: | https://doi.org/10.1088/2752-5724/ada8c5 |
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| author | Q Xu J Eckert D Şopu |
| author_facet | Q Xu J Eckert D Şopu |
| author_sort | Q Xu |
| collection | DOAJ |
| description | Bi-phase interfacial engineering is an effective method for improving irradiation resistance, as interfaces play a critical role in defect generation and annihilation. In this work, molecular dynamics simulations are performed to investigate the evolution of the high entropy crystalline/amorphous laminates under ion irradiation. The effects of the crystalline/amorphous interface (ACI) on the distribution of point defects in the high entropy alloy (HEA) as well as on the microstructure evolution in metallic glass (MG) plates are investigated. During irradiation, fewer activated point defects were found in the HEA plate of the MG/HEA laminates compared to a free-standing HEA. In addition, the interface acts as a defect sink, accelerating the annihilation of interstitials at the interface. As a result, residual vacancies accumulate in the crystalline region following the first cascade, leading to a segregated distribution and an imbalance between the vacancies and interstitials in the HEA plate. Vacancy accumulation and clustering are responsible for the formation of stacking faults and complex dislocation networks in the HEA plate in the subsequent overlapping cascades. The interface also acts as a crystallization seed, accelerating the crystallization of the MG plate during irradiation process. However, the structural damage in the MG plate is mitigated by the redistribution of the free volume generated in the collision cascade zone, resulting in structural stability of the MG plate in the overlapping cascades. |
| format | Article |
| id | doaj-art-7e77f456e3e5483d83defb92b7f67e45 |
| institution | Kabale University |
| issn | 2752-5724 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | Materials Futures |
| spelling | doaj-art-7e77f456e3e5483d83defb92b7f67e452025-01-29T08:21:50ZengIOP PublishingMaterials Futures2752-57242025-01-014101530110.1088/2752-5724/ada8c5Improved irradiation resistance of high entropy nanolaminates through interface engineeringQ Xu0J Eckert1D Şopu2https://orcid.org/0000-0001-5531-462XErich Schmid Institute of Materials Science, Austrian Academy of Sciences , Jahnstraße 12, A-8700 Leoben, Austria; Department of Materials Science, Chair of Materials Physics, Montanuniversität Leoben , Jahnstraße 12, A-8700 Leoben, AustriaErich Schmid Institute of Materials Science, Austrian Academy of Sciences , Jahnstraße 12, A-8700 Leoben, Austria; Department of Materials Science, Chair of Materials Physics, Montanuniversität Leoben , Jahnstraße 12, A-8700 Leoben, AustriaErich Schmid Institute of Materials Science, Austrian Academy of Sciences , Jahnstraße 12, A-8700 Leoben, Austria; Institute of Materials Science, Technical University of Darmstadt , Otto-Berndt-Straße 3, D-64287 Darmstadt, GermanyBi-phase interfacial engineering is an effective method for improving irradiation resistance, as interfaces play a critical role in defect generation and annihilation. In this work, molecular dynamics simulations are performed to investigate the evolution of the high entropy crystalline/amorphous laminates under ion irradiation. The effects of the crystalline/amorphous interface (ACI) on the distribution of point defects in the high entropy alloy (HEA) as well as on the microstructure evolution in metallic glass (MG) plates are investigated. During irradiation, fewer activated point defects were found in the HEA plate of the MG/HEA laminates compared to a free-standing HEA. In addition, the interface acts as a defect sink, accelerating the annihilation of interstitials at the interface. As a result, residual vacancies accumulate in the crystalline region following the first cascade, leading to a segregated distribution and an imbalance between the vacancies and interstitials in the HEA plate. Vacancy accumulation and clustering are responsible for the formation of stacking faults and complex dislocation networks in the HEA plate in the subsequent overlapping cascades. The interface also acts as a crystallization seed, accelerating the crystallization of the MG plate during irradiation process. However, the structural damage in the MG plate is mitigated by the redistribution of the free volume generated in the collision cascade zone, resulting in structural stability of the MG plate in the overlapping cascades.https://doi.org/10.1088/2752-5724/ada8c5high entropy alloymetallic glassirradiationinterfacemolecular dynamics |
| spellingShingle | Q Xu J Eckert D Şopu Improved irradiation resistance of high entropy nanolaminates through interface engineering Materials Futures high entropy alloy metallic glass irradiation interface molecular dynamics |
| title | Improved irradiation resistance of high entropy nanolaminates through interface engineering |
| title_full | Improved irradiation resistance of high entropy nanolaminates through interface engineering |
| title_fullStr | Improved irradiation resistance of high entropy nanolaminates through interface engineering |
| title_full_unstemmed | Improved irradiation resistance of high entropy nanolaminates through interface engineering |
| title_short | Improved irradiation resistance of high entropy nanolaminates through interface engineering |
| title_sort | improved irradiation resistance of high entropy nanolaminates through interface engineering |
| topic | high entropy alloy metallic glass irradiation interface molecular dynamics |
| url | https://doi.org/10.1088/2752-5724/ada8c5 |
| work_keys_str_mv | AT qxu improvedirradiationresistanceofhighentropynanolaminatesthroughinterfaceengineering AT jeckert improvedirradiationresistanceofhighentropynanolaminatesthroughinterfaceengineering AT dsopu improvedirradiationresistanceofhighentropynanolaminatesthroughinterfaceengineering |