Low-Noise 3-D Avalanche Photodiodes
In this paper, we present a new 3-D structure for the InP-based avalanche photodiode, aiming at decreasing the excess noise factor. To the best of our knowledge, it is the first time new device designs based on the recently developed 3-D spatial dead space model in 2014 have been proposed. In additi...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7488195/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this paper, we present a new 3-D structure for the InP-based avalanche photodiode, aiming at decreasing the excess noise factor. To the best of our knowledge, it is the first time new device designs based on the recently developed 3-D spatial dead space model in 2014 have been proposed. In addition, we also propose a methodology, i.e., the 2-D planar absorption distribution projection technique, for further optimizing the 3-D model. According to our theoretical simulation results, by combining photonic crystal and selective area doping, the effective k values of InP and In<sub>0.52</sub>Al<sub>0.48</sub>As can be reduced to as low as ∼0.19 and as ∼0.13, respectively. Meanwhile, the optimal thickness of the multiplication region is larger than 0.45 <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula>, which reduces the tunneling effect. The detailed parameter optimization process, including optics, electronics, and material, is comprehensively presented. The examples in this paper also provide a fresh idea for researchers to foretell and design new photodetectors with the 3-D structure. |
|---|---|
| ISSN: | 1943-0655 |