Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demons...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2011/316513 |
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| _version_ | 1832545583042134016 |
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| author | Jianshi Tang Chiu-Yen Wang Faxian Xiu Yi Zhou Lih-Juann Chen Kang L. Wang |
| author_facet | Jianshi Tang Chiu-Yen Wang Faxian Xiu Yi Zhou Lih-Juann Chen Kang L. Wang |
| author_sort | Jianshi Tang |
| collection | DOAJ |
| description | We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors. |
| format | Article |
| id | doaj-art-7bd8870237664c418c3c16b89f630f29 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-7bd8870237664c418c3c16b89f630f292025-02-03T07:25:24ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422011-01-01201110.1155/2011/316513316513Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal AnnealingJianshi Tang0Chiu-Yen Wang1Faxian Xiu2Yi Zhou3Lih-Juann Chen4Kang L. Wang5Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USADepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USADevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USADepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USAWe reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.http://dx.doi.org/10.1155/2011/316513 |
| spellingShingle | Jianshi Tang Chiu-Yen Wang Faxian Xiu Yi Zhou Lih-Juann Chen Kang L. Wang Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing Advances in Materials Science and Engineering |
| title | Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing |
| title_full | Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing |
| title_fullStr | Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing |
| title_full_unstemmed | Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing |
| title_short | Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing |
| title_sort | formation and device application of ge nanowire heterostructures via rapid thermal annealing |
| url | http://dx.doi.org/10.1155/2011/316513 |
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