C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental...

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Main Authors: A. Gonzalez-Cisneros, F. L. Castillo-Alvarado, J. Ortiz-Lopez, G. Contreras-Puente
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/513217
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author A. Gonzalez-Cisneros
F. L. Castillo-Alvarado
J. Ortiz-Lopez
G. Contreras-Puente
author_facet A. Gonzalez-Cisneros
F. L. Castillo-Alvarado
J. Ortiz-Lopez
G. Contreras-Puente
author_sort A. Gonzalez-Cisneros
collection DOAJ
description In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.
format Article
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institution Kabale University
issn 1110-662X
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language English
publishDate 2013-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-7bbfc61d566748b8aeec25386b9b95262025-02-03T06:06:46ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/513217513217C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x InterlayerA. Gonzalez-Cisneros0F. L. Castillo-Alvarado1J. Ortiz-Lopez2G. Contreras-Puente3Escuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoIn CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.http://dx.doi.org/10.1155/2013/513217
spellingShingle A. Gonzalez-Cisneros
F. L. Castillo-Alvarado
J. Ortiz-Lopez
G. Contreras-Puente
C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
International Journal of Photoenergy
title C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
title_full C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
title_fullStr C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
title_full_unstemmed C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
title_short C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
title_sort c v calculations in cds cdte thin films solar cells with a cdsxte1 x interlayer
url http://dx.doi.org/10.1155/2013/513217
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