C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental...
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Wiley
2013-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/513217 |
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author | A. Gonzalez-Cisneros F. L. Castillo-Alvarado J. Ortiz-Lopez G. Contreras-Puente |
author_facet | A. Gonzalez-Cisneros F. L. Castillo-Alvarado J. Ortiz-Lopez G. Contreras-Puente |
author_sort | A. Gonzalez-Cisneros |
collection | DOAJ |
description | In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques. |
format | Article |
id | doaj-art-7bbfc61d566748b8aeec25386b9b9526 |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2013-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-7bbfc61d566748b8aeec25386b9b95262025-02-03T06:06:46ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/513217513217C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x InterlayerA. Gonzalez-Cisneros0F. L. Castillo-Alvarado1J. Ortiz-Lopez2G. Contreras-Puente3Escuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoEscuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, MexicoIn CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.http://dx.doi.org/10.1155/2013/513217 |
spellingShingle | A. Gonzalez-Cisneros F. L. Castillo-Alvarado J. Ortiz-Lopez G. Contreras-Puente C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer International Journal of Photoenergy |
title | C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer |
title_full | C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer |
title_fullStr | C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer |
title_full_unstemmed | C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer |
title_short | C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer |
title_sort | c v calculations in cds cdte thin films solar cells with a cdsxte1 x interlayer |
url | http://dx.doi.org/10.1155/2013/513217 |
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