C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer
In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley
2013-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/513217 |
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Summary: | In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques. |
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ISSN: | 1110-662X 1687-529X |