Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study
Electrical contacts are of the greatest importance as they decisively contribute to the overall performance of photoresistors. Undoped κ-Ga<sub>2</sub>O<sub>3</sub> is an ideal material for photoresistors with high performance in the UV-C spectral region thanks to its intrins...
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MDPI AG
2025-01-01
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| author | Maura Pavesi Antonella Parisini Pietro Calvi Alessio Bosio Roberto Fornari |
| author_facet | Maura Pavesi Antonella Parisini Pietro Calvi Alessio Bosio Roberto Fornari |
| author_sort | Maura Pavesi |
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| description | Electrical contacts are of the greatest importance as they decisively contribute to the overall performance of photoresistors. Undoped κ-Ga<sub>2</sub>O<sub>3</sub> is an ideal material for photoresistors with high performance in the UV-C spectral region thanks to its intrinsic solar blindness and extremely low dark current. The quality assessment of the contact/κ-Ga<sub>2</sub>O<sub>3</sub> interface is therefore of paramount importance. The transfer length method is not applicable to undoped Ga<sub>2</sub>O<sub>3</sub> because the interface with several metals shows a non-ohmic character, and a non-equivalent contact resistance could restrict its applicability. In this work, a new methodological procedure to evaluate the quality of contact interface and its effect on the sensing performance of UV-C photoresistors is presented, using the SnO<sub>2−x</sub>/κ-Ga<sub>2</sub>O<sub>3</sub> contact interface as a case study. The proposed method includes a critical comparison between two-point and four-point probe measurements, over a wide range of voltages. The investigation showed that the effect of contact resistance is more pronounced at low voltages. The presented method can be easily extended to any kind of metal/semiconductor or degenerate-semiconductor/semiconductor interface. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2025-01-01 |
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| spelling | doaj-art-7bac82a1adbe4382980c6fcba7618def2025-01-24T13:48:35ZengMDPI AGSensors1424-82202025-01-0125234510.3390/s25020345Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case StudyMaura Pavesi0Antonella Parisini1Pietro Calvi2Alessio Bosio3Roberto Fornari4Department of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, ItalyElectrical contacts are of the greatest importance as they decisively contribute to the overall performance of photoresistors. Undoped κ-Ga<sub>2</sub>O<sub>3</sub> is an ideal material for photoresistors with high performance in the UV-C spectral region thanks to its intrinsic solar blindness and extremely low dark current. The quality assessment of the contact/κ-Ga<sub>2</sub>O<sub>3</sub> interface is therefore of paramount importance. The transfer length method is not applicable to undoped Ga<sub>2</sub>O<sub>3</sub> because the interface with several metals shows a non-ohmic character, and a non-equivalent contact resistance could restrict its applicability. In this work, a new methodological procedure to evaluate the quality of contact interface and its effect on the sensing performance of UV-C photoresistors is presented, using the SnO<sub>2−x</sub>/κ-Ga<sub>2</sub>O<sub>3</sub> contact interface as a case study. The proposed method includes a critical comparison between two-point and four-point probe measurements, over a wide range of voltages. The investigation showed that the effect of contact resistance is more pronounced at low voltages. The presented method can be easily extended to any kind of metal/semiconductor or degenerate-semiconductor/semiconductor interface.https://www.mdpi.com/1424-8220/25/2/345SnO<sub>2−x</sub>/κ-Ga<sub>2</sub>O<sub>3</sub> interfacecontact resistanceTLMfour-point probe configurationUV-C detectorsphotogain |
| spellingShingle | Maura Pavesi Antonella Parisini Pietro Calvi Alessio Bosio Roberto Fornari Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study Sensors SnO<sub>2−x</sub>/κ-Ga<sub>2</sub>O<sub>3</sub> interface contact resistance TLM four-point probe configuration UV-C detectors photogain |
| title | Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study |
| title_full | Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study |
| title_fullStr | Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study |
| title_full_unstemmed | Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study |
| title_short | Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study |
| title_sort | effects of the interface properties on the performance of uv c photoresistors gallium oxide as case study |
| topic | SnO<sub>2−x</sub>/κ-Ga<sub>2</sub>O<sub>3</sub> interface contact resistance TLM four-point probe configuration UV-C detectors photogain |
| url | https://www.mdpi.com/1424-8220/25/2/345 |
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