Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD
Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with Er3+ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained with...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2009-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2009/769142 |
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| author | G. Zatryb A. Podhorodecki J. Misiewicz J. Wojcik P. Mascher |
| author_facet | G. Zatryb A. Podhorodecki J. Misiewicz J. Wojcik P. Mascher |
| author_sort | G. Zatryb |
| collection | DOAJ |
| description | Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with
Er3+ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to Er3+ ions is discussed. |
| format | Article |
| id | doaj-art-7afc72dfc4ad49bd852385fd244fed2e |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2009-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-7afc72dfc4ad49bd852385fd244fed2e2025-02-03T01:11:33ZengWileyJournal of Nanotechnology1687-95031687-95112009-01-01200910.1155/2009/769142769142Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVDG. Zatryb0A. Podhorodecki1J. Misiewicz2J. Wojcik3P. Mascher4Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, PolandInstitute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, PolandInstitute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, PolandCentre for Emerging Device Technologies, Hamilton, ON, L8S 4L7, CanadaCentre for Emerging Device Technologies, Hamilton, ON, L8S 4L7, CanadaSilicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with Er3+ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to Er3+ ions is discussed.http://dx.doi.org/10.1155/2009/769142 |
| spellingShingle | G. Zatryb A. Podhorodecki J. Misiewicz J. Wojcik P. Mascher Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD Journal of Nanotechnology |
| title | Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD |
| title_full | Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD |
| title_fullStr | Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD |
| title_full_unstemmed | Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD |
| title_short | Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD |
| title_sort | size dependent indirect excitation of trivalent er ions via si nanocrystals embedded in a silicon rich silicon oxide matrix deposited by ecr pecvd |
| url | http://dx.doi.org/10.1155/2009/769142 |
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