Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM
There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Discrete Dynamics in Nature and Society |
| Online Access: | http://dx.doi.org/10.1155/2015/586842 |
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| _version_ | 1832565173844443136 |
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| author | Peng Hai-yun Zhou Wen-gang |
| author_facet | Peng Hai-yun Zhou Wen-gang |
| author_sort | Peng Hai-yun |
| collection | DOAJ |
| description | There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix. |
| format | Article |
| id | doaj-art-7add3f81651a407e9e339595f6656ce3 |
| institution | Kabale University |
| issn | 1026-0226 1607-887X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Discrete Dynamics in Nature and Society |
| spelling | doaj-art-7add3f81651a407e9e339595f6656ce32025-02-03T01:09:09ZengWileyDiscrete Dynamics in Nature and Society1026-02261607-887X2015-01-01201510.1155/2015/586842586842Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAMPeng Hai-yun0Zhou Wen-gang1School of Computer Science and Technology, Zhoukou Normal University, Zhoukou 466001, ChinaSchool of Computer Science and Technology, Zhoukou Normal University, Zhoukou 466001, ChinaThere are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.http://dx.doi.org/10.1155/2015/586842 |
| spellingShingle | Peng Hai-yun Zhou Wen-gang Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM Discrete Dynamics in Nature and Society |
| title | Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM |
| title_full | Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM |
| title_fullStr | Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM |
| title_full_unstemmed | Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM |
| title_short | Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM |
| title_sort | optimal design of fpga switch matrix with ion mobility based nonvolatile reram |
| url | http://dx.doi.org/10.1155/2015/586842 |
| work_keys_str_mv | AT penghaiyun optimaldesignoffpgaswitchmatrixwithionmobilitybasednonvolatilereram AT zhouwengang optimaldesignoffpgaswitchmatrixwithionmobilitybasednonvolatilereram |