Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO<sub>2</sub>/Ti RRAM Device via Post Annealing Process
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this st...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Inorganics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6740/12/12/299 |
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