Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell
Different etching times are used to etch silicon wafers. Effects of surface morphology on wafer minority carrier lifetime, passivation quality, and heterojunction solar cell (HJ) performance are investigated. The numbers of mountains and valleys, defined as turning points, on wafer surfaces are used...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/273615 |
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| _version_ | 1832550631553892352 |
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| author | Shui-Yang Lien Yun-Shao Cho Yan Shao Chia-Hsun Hsu Chia-Chi Tsou Wei Yan Pin Han Dong-Sing Wuu |
| author_facet | Shui-Yang Lien Yun-Shao Cho Yan Shao Chia-Hsun Hsu Chia-Chi Tsou Wei Yan Pin Han Dong-Sing Wuu |
| author_sort | Shui-Yang Lien |
| collection | DOAJ |
| description | Different etching times are used to etch silicon wafers. Effects of surface morphology on wafer minority carrier lifetime, passivation quality, and heterojunction solar cell (HJ) performance are investigated. The numbers of mountains and valleys, defined as turning points, on wafer surfaces are used to explain the minority carrier lifetime variations. For a wafer with a smaller amount of turning points, hydrogenated amorphous silicon (a-Si:H) passivation quality can be comparable to ideal iodine-ethanol solution passivation. If the wafer has a notable amount of turning points, the carrier lifetime decreases as the a-Si:H layer will not be able to be well-deposited on turning points. Furthermore, the PC1D simulation indicates that an optimal device conversion efficiency of 21.94% can be achieved at an etching time of 60 min, where a best combination of short-circuit current and open-circuit voltage is obtained. |
| format | Article |
| id | doaj-art-79ea81b4dfec403f8dd9ce426b1fdc60 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-79ea81b4dfec403f8dd9ce426b1fdc602025-02-03T06:06:17ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/273615273615Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar CellShui-Yang Lien0Yun-Shao Cho1Yan Shao2Chia-Hsun Hsu3Chia-Chi Tsou4Wei Yan5Pin Han6Dong-Sing Wuu7Department of Materials Science and Engineering, Dayeh University, Changhua 515, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 402, TaiwanSchool of Software and Microelectronics, Peking University, Beijing 100871, ChinaGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, Changhua 52354, TaiwanSchool of Software and Microelectronics, Peking University, Beijing 100871, ChinaGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 402, TaiwanDifferent etching times are used to etch silicon wafers. Effects of surface morphology on wafer minority carrier lifetime, passivation quality, and heterojunction solar cell (HJ) performance are investigated. The numbers of mountains and valleys, defined as turning points, on wafer surfaces are used to explain the minority carrier lifetime variations. For a wafer with a smaller amount of turning points, hydrogenated amorphous silicon (a-Si:H) passivation quality can be comparable to ideal iodine-ethanol solution passivation. If the wafer has a notable amount of turning points, the carrier lifetime decreases as the a-Si:H layer will not be able to be well-deposited on turning points. Furthermore, the PC1D simulation indicates that an optimal device conversion efficiency of 21.94% can be achieved at an etching time of 60 min, where a best combination of short-circuit current and open-circuit voltage is obtained.http://dx.doi.org/10.1155/2015/273615 |
| spellingShingle | Shui-Yang Lien Yun-Shao Cho Yan Shao Chia-Hsun Hsu Chia-Chi Tsou Wei Yan Pin Han Dong-Sing Wuu Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell International Journal of Photoenergy |
| title | Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell |
| title_full | Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell |
| title_fullStr | Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell |
| title_full_unstemmed | Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell |
| title_short | Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell |
| title_sort | influence of surface morphology on the effective lifetime and performance of silicon heterojunction solar cell |
| url | http://dx.doi.org/10.1155/2015/273615 |
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