Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene
The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators fo...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-02-01
|
| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.15.011045 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850229027973890048 |
|---|---|
| author | Dacen Waters Anna Okounkova Ruiheng Su Boran Zhou Jiang Yao Kenji Watanabe Takashi Taniguchi Xiaodong Xu Ya-Hui Zhang Joshua Folk Matthew Yankowitz |
| author_facet | Dacen Waters Anna Okounkova Ruiheng Su Boran Zhou Jiang Yao Kenji Watanabe Takashi Taniguchi Xiaodong Xu Ya-Hui Zhang Joshua Folk Matthew Yankowitz |
| author_sort | Dacen Waters |
| collection | DOAJ |
| description | The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell (ν=1), we see a correlated insulator with a Chern number that can be tuned between C=0 and +1 by an electric displacement field. This is accompanied by a series of additional Chern insulators with C=+1 originating from fractional fillings of the moiré lattice—ν=1/4, 1/3, and 2/3—associated with the formation of moiré-driven topological electronic crystals. At ν=2/3 the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient C=2/3 fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators. |
| format | Article |
| id | doaj-art-7990bf89cea447df807745fabbd5561a |
| institution | OA Journals |
| issn | 2160-3308 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj-art-7990bf89cea447df807745fabbd5561a2025-08-20T02:04:21ZengAmerican Physical SocietyPhysical Review X2160-33082025-02-0115101104510.1103/PhysRevX.15.011045Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer GrapheneDacen WatersAnna OkounkovaRuiheng SuBoran ZhouJiang YaoKenji WatanabeTakashi TaniguchiXiaodong XuYa-Hui ZhangJoshua FolkMatthew YankowitzThe advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell (ν=1), we see a correlated insulator with a Chern number that can be tuned between C=0 and +1 by an electric displacement field. This is accompanied by a series of additional Chern insulators with C=+1 originating from fractional fillings of the moiré lattice—ν=1/4, 1/3, and 2/3—associated with the formation of moiré-driven topological electronic crystals. At ν=2/3 the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient C=2/3 fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators.http://doi.org/10.1103/PhysRevX.15.011045 |
| spellingShingle | Dacen Waters Anna Okounkova Ruiheng Su Boran Zhou Jiang Yao Kenji Watanabe Takashi Taniguchi Xiaodong Xu Ya-Hui Zhang Joshua Folk Matthew Yankowitz Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene Physical Review X |
| title | Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene |
| title_full | Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene |
| title_fullStr | Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene |
| title_full_unstemmed | Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene |
| title_short | Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene |
| title_sort | chern insulators at integer and fractional filling in moire pentalayer graphene |
| url | http://doi.org/10.1103/PhysRevX.15.011045 |
| work_keys_str_mv | AT dacenwaters cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT annaokounkova cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT ruihengsu cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT boranzhou cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT jiangyao cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT kenjiwatanabe cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT takashitaniguchi cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT xiaodongxu cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT yahuizhang cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT joshuafolk cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene AT matthewyankowitz cherninsulatorsatintegerandfractionalfillinginmoirepentalayergraphene |