100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | The Scientific World Journal |
| Online Access: | http://dx.doi.org/10.1155/2014/136340 |
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| author | Cyrille Gardès Sonia Bagumako Ludovic Desplanque Nicolas Wichmann Sylvain Bollaert François Danneville Xavier Wallart Yannick Roelens |
| author_facet | Cyrille Gardès Sonia Bagumako Ludovic Desplanque Nicolas Wichmann Sylvain Bollaert François Danneville Xavier Wallart Yannick Roelens |
| author_sort | Cyrille Gardès |
| collection | DOAJ |
| description | We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. |
| format | Article |
| id | doaj-art-77fedeea9d5541009613d2617b02b41d |
| institution | Kabale University |
| issn | 2356-6140 1537-744X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | The Scientific World Journal |
| spelling | doaj-art-77fedeea9d5541009613d2617b02b41d2025-02-03T06:12:28ZengWileyThe Scientific World Journal2356-61401537-744X2014-01-01201410.1155/2014/136340136340100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise ApplicationsCyrille Gardès0Sonia Bagumako1Ludovic Desplanque2Nicolas Wichmann3Sylvain Bollaert4François Danneville5Xavier Wallart6Yannick Roelens7Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceInstitut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, FranceWe report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.http://dx.doi.org/10.1155/2014/136340 |
| spellingShingle | Cyrille Gardès Sonia Bagumako Ludovic Desplanque Nicolas Wichmann Sylvain Bollaert François Danneville Xavier Wallart Yannick Roelens 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications The Scientific World Journal |
| title | 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications |
| title_full | 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications |
| title_fullStr | 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications |
| title_full_unstemmed | 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications |
| title_short | 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications |
| title_sort | 100 nm alsb inas hemt for ultra low power consumption low noise applications |
| url | http://dx.doi.org/10.1155/2014/136340 |
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