100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | The Scientific World Journal |
| Online Access: | http://dx.doi.org/10.1155/2014/136340 |
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| Summary: | We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. |
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| ISSN: | 2356-6140 1537-744X |