Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires
Abstract The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell of observing a photothermoelectric bipolar impulse characteristic. B...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56617-z |
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| author | Jinjie Zhu Qing Cai Pengfei Shao Shengjie Zhang Haifan You Hui Guo Jin Wang Junjun Xue Bin Liu Hai Lu Youdou Zheng Rong Zhang Dunjun Chen |
| author_facet | Jinjie Zhu Qing Cai Pengfei Shao Shengjie Zhang Haifan You Hui Guo Jin Wang Junjun Xue Bin Liu Hai Lu Youdou Zheng Rong Zhang Dunjun Chen |
| author_sort | Jinjie Zhu |
| collection | DOAJ |
| description | Abstract The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell of observing a photothermoelectric bipolar impulse characteristic. By leveraging the distinct thermoelectric properties of GaON/GaN, rapid generation of hot carriers establishes bidirectional instantaneous gradients in concentration and temperature within the nanoscale heterostructure via light on/off modulation. The thermoelectromotive force induced by these gradients, combined with the type-II heterojunction band structure, facilitates carrier transport, resulting in transient bidirectional photothermal currents. The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. Anticipated applications encompass future sensing, switchable light imaging, and energy conversion systems, thereby laying a foundation for diverse optoelectronic technological advancements. |
| format | Article |
| id | doaj-art-76f33802094145ab863c5912d9ddb66d |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-76f33802094145ab863c5912d9ddb66d2025-02-02T12:33:37ZengNature PortfolioNature Communications2041-17232025-01-0116111010.1038/s41467-025-56617-zObservation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowiresJinjie Zhu0Qing Cai1Pengfei Shao2Shengjie Zhang3Haifan You4Hui Guo5Jin Wang6Junjun Xue7Bin Liu8Hai Lu9Youdou Zheng10Rong Zhang11Dunjun Chen12Key Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and TelecommunicationsCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and TelecommunicationsKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing UniversityAbstract The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell of observing a photothermoelectric bipolar impulse characteristic. By leveraging the distinct thermoelectric properties of GaON/GaN, rapid generation of hot carriers establishes bidirectional instantaneous gradients in concentration and temperature within the nanoscale heterostructure via light on/off modulation. The thermoelectromotive force induced by these gradients, combined with the type-II heterojunction band structure, facilitates carrier transport, resulting in transient bidirectional photothermal currents. The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. Anticipated applications encompass future sensing, switchable light imaging, and energy conversion systems, thereby laying a foundation for diverse optoelectronic technological advancements.https://doi.org/10.1038/s41467-025-56617-z |
| spellingShingle | Jinjie Zhu Qing Cai Pengfei Shao Shengjie Zhang Haifan You Hui Guo Jin Wang Junjun Xue Bin Liu Hai Lu Youdou Zheng Rong Zhang Dunjun Chen Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires Nature Communications |
| title | Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires |
| title_full | Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires |
| title_fullStr | Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires |
| title_full_unstemmed | Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires |
| title_short | Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires |
| title_sort | observation of ultraviolet photothermoelectric bipolar impulse in gallium based heterostructure nanowires |
| url | https://doi.org/10.1038/s41467-025-56617-z |
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