The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures

In this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (...

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Main Authors: M. Yermakov, R. Pshenychnyi, A. Opanasyuk, Yu. Gnatenko, P. Bukivskij, A. Bukivskii, O. Кlymov, V. Muñoz-Sanjosé, R. Gamernyk
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Applied Surface Science Advances
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Online Access:http://www.sciencedirect.com/science/article/pii/S2666523924000965
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author M. Yermakov
R. Pshenychnyi
A. Opanasyuk
Yu. Gnatenko
P. Bukivskij
A. Bukivskii
O. Кlymov
V. Muñoz-Sanjosé
R. Gamernyk
author_facet M. Yermakov
R. Pshenychnyi
A. Opanasyuk
Yu. Gnatenko
P. Bukivskij
A. Bukivskii
O. Кlymov
V. Muñoz-Sanjosé
R. Gamernyk
author_sort M. Yermakov
collection DOAJ
description In this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (300 – 500) °C in steps of ΔT = 50 °C. X-ray diffraction results indicate the presence of only the hexagonal ZnO and cubic NiO phases in the studied samples, which was confirmed by Raman spectroscopy. Low-temperature photoluminescence (PL), as well as absorption and photoconductivity, were studied to establish the optical properties, the nature of electronic optical transitions, the energy level position of the different defects present in the samples, and the effect of temperature annealing on these properties The band gap of the compounds was determined using the Tauc approximation and the first derivative of the absorption coefficient. Likewise, the current-voltage characteristics of the n-ZnO/p-NiO heterostructures and their diode character, were analyzed.
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publishDate 2025-01-01
publisher Elsevier
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series Applied Surface Science Advances
spelling doaj-art-76e91b0f9c684cc3989d5d83fb9aacde2025-01-29T05:02:04ZengElsevierApplied Surface Science Advances2666-52392025-01-0125100668The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructuresM. Yermakov0R. Pshenychnyi1A. Opanasyuk2Yu. Gnatenko3P. Bukivskij4A. Bukivskii5O. Кlymov6V. Muñoz-Sanjosé7R. Gamernyk8Sumy State University, Kharkivska str., 116, Sumy UA-40007, Ukraine; Corresponding author.Sumy State University, Kharkivska str., 116, Sumy UA-40007, UkraineSumy State University, Kharkivska str., 116, Sumy UA-40007, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineDepartment of Applied Physics and Electromagnetism, Universitat de València, C/Dr. Moliner 50, Burjassot 46100, SpainDepartment of Applied Physics and Electromagnetism, Universitat de València, C/Dr. Moliner 50, Burjassot 46100, SpainIvan Franko National University of Lviv, 8 Kyrylo and Mefodiy Str., Lviv 79005, UkraineIn this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (300 – 500) °C in steps of ΔT = 50 °C. X-ray diffraction results indicate the presence of only the hexagonal ZnO and cubic NiO phases in the studied samples, which was confirmed by Raman spectroscopy. Low-temperature photoluminescence (PL), as well as absorption and photoconductivity, were studied to establish the optical properties, the nature of electronic optical transitions, the energy level position of the different defects present in the samples, and the effect of temperature annealing on these properties The band gap of the compounds was determined using the Tauc approximation and the first derivative of the absorption coefficient. Likewise, the current-voltage characteristics of the n-ZnO/p-NiO heterostructures and their diode character, were analyzed.http://www.sciencedirect.com/science/article/pii/S2666523924000965n-ZnO/p-NiO heterostructuresSpray pyrolysisAnnealing effectsDiffraction analysisOptical propertiesRectifying-electrical properties
spellingShingle M. Yermakov
R. Pshenychnyi
A. Opanasyuk
Yu. Gnatenko
P. Bukivskij
A. Bukivskii
O. Кlymov
V. Muñoz-Sanjosé
R. Gamernyk
The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
Applied Surface Science Advances
n-ZnO/p-NiO heterostructures
Spray pyrolysis
Annealing effects
Diffraction analysis
Optical properties
Rectifying-electrical properties
title The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
title_full The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
title_fullStr The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
title_full_unstemmed The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
title_short The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
title_sort effect of annealing on the structural optical electrical and photoelectric properties of zno nio heterostructures
topic n-ZnO/p-NiO heterostructures
Spray pyrolysis
Annealing effects
Diffraction analysis
Optical properties
Rectifying-electrical properties
url http://www.sciencedirect.com/science/article/pii/S2666523924000965
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