The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures
In this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (...
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2025-01-01
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author | M. Yermakov R. Pshenychnyi A. Opanasyuk Yu. Gnatenko P. Bukivskij A. Bukivskii O. Кlymov V. Muñoz-Sanjosé R. Gamernyk |
author_facet | M. Yermakov R. Pshenychnyi A. Opanasyuk Yu. Gnatenko P. Bukivskij A. Bukivskii O. Кlymov V. Muñoz-Sanjosé R. Gamernyk |
author_sort | M. Yermakov |
collection | DOAJ |
description | In this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (300 – 500) °C in steps of ΔT = 50 °C. X-ray diffraction results indicate the presence of only the hexagonal ZnO and cubic NiO phases in the studied samples, which was confirmed by Raman spectroscopy. Low-temperature photoluminescence (PL), as well as absorption and photoconductivity, were studied to establish the optical properties, the nature of electronic optical transitions, the energy level position of the different defects present in the samples, and the effect of temperature annealing on these properties The band gap of the compounds was determined using the Tauc approximation and the first derivative of the absorption coefficient. Likewise, the current-voltage characteristics of the n-ZnO/p-NiO heterostructures and their diode character, were analyzed. |
format | Article |
id | doaj-art-76e91b0f9c684cc3989d5d83fb9aacde |
institution | Kabale University |
issn | 2666-5239 |
language | English |
publishDate | 2025-01-01 |
publisher | Elsevier |
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series | Applied Surface Science Advances |
spelling | doaj-art-76e91b0f9c684cc3989d5d83fb9aacde2025-01-29T05:02:04ZengElsevierApplied Surface Science Advances2666-52392025-01-0125100668The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructuresM. Yermakov0R. Pshenychnyi1A. Opanasyuk2Yu. Gnatenko3P. Bukivskij4A. Bukivskii5O. Кlymov6V. Muñoz-Sanjosé7R. Gamernyk8Sumy State University, Kharkivska str., 116, Sumy UA-40007, Ukraine; Corresponding author.Sumy State University, Kharkivska str., 116, Sumy UA-40007, UkraineSumy State University, Kharkivska str., 116, Sumy UA-40007, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineInstitute of Physics of National Academy of Sciences of Ukraine, 46 Nauky Pr., Kyiv 03028, UkraineDepartment of Applied Physics and Electromagnetism, Universitat de València, C/Dr. Moliner 50, Burjassot 46100, SpainDepartment of Applied Physics and Electromagnetism, Universitat de València, C/Dr. Moliner 50, Burjassot 46100, SpainIvan Franko National University of Lviv, 8 Kyrylo and Mefodiy Str., Lviv 79005, UkraineIn this study, n-ZnO/p-NiO heterostructures on glass substrates with an indium tin oxide (ITO) covering were obtained by using the spray pyrolysis methodology. In order to act on the structural and local compositional defects, the samples were annealed under vacuum in the temperature range of Ta = (300 – 500) °C in steps of ΔT = 50 °C. X-ray diffraction results indicate the presence of only the hexagonal ZnO and cubic NiO phases in the studied samples, which was confirmed by Raman spectroscopy. Low-temperature photoluminescence (PL), as well as absorption and photoconductivity, were studied to establish the optical properties, the nature of electronic optical transitions, the energy level position of the different defects present in the samples, and the effect of temperature annealing on these properties The band gap of the compounds was determined using the Tauc approximation and the first derivative of the absorption coefficient. Likewise, the current-voltage characteristics of the n-ZnO/p-NiO heterostructures and their diode character, were analyzed.http://www.sciencedirect.com/science/article/pii/S2666523924000965n-ZnO/p-NiO heterostructuresSpray pyrolysisAnnealing effectsDiffraction analysisOptical propertiesRectifying-electrical properties |
spellingShingle | M. Yermakov R. Pshenychnyi A. Opanasyuk Yu. Gnatenko P. Bukivskij A. Bukivskii O. Кlymov V. Muñoz-Sanjosé R. Gamernyk The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures Applied Surface Science Advances n-ZnO/p-NiO heterostructures Spray pyrolysis Annealing effects Diffraction analysis Optical properties Rectifying-electrical properties |
title | The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures |
title_full | The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures |
title_fullStr | The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures |
title_full_unstemmed | The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures |
title_short | The effect of annealing on the structural, optical, electrical and photoelectric properties of ZnO/NiO heterostructures |
title_sort | effect of annealing on the structural optical electrical and photoelectric properties of zno nio heterostructures |
topic | n-ZnO/p-NiO heterostructures Spray pyrolysis Annealing effects Diffraction analysis Optical properties Rectifying-electrical properties |
url | http://www.sciencedirect.com/science/article/pii/S2666523924000965 |
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