Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors

Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors

Abstract Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely su...

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Main Authors: Seonkwon Kim, Su Hyun Kim, Hui Ung Hwang, Jeongmin Kim, Jeong Won Kim, In Cheol Kwak, Byeongjae Kang, Seungjae Lee, Sae Byeok Jo, Du Yeol Ryu, Hyunjung Kim, Jae-Min Myoung, Moon Sung Kang, Saeroonter Oh, Jeong Ho Cho
Format: Article
Language:English
Published: Nature Portfolio 2025-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-62770-2
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