Probe device for electrical measurements of parameters thin doped films ZnO
Probe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin films ZnO with thickness in the interval (0,065–...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-03-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| author | A. I. Blesman R. B. Burlakov |
| author_facet | A. I. Blesman R. B. Burlakov |
| author_sort | A. I. Blesman |
| collection | DOAJ |
| description | Probe device for electrical measurements of parameters thin doped
films ZnO is considered. On the base of use of this probe device
there is measured by the Hall E ffect method the concentration
of electrons of the conductivity in indium doped thin films ZnO
with thickness in the interval (0,065–0,3) μm concentration of
electrons of the conductivity in the interval (2–3,4)∙1019 cm–3 and
low mobility of electrons of the conductivity — (4–8,5) cm2
/B∙s.
Dignity of probe device is a possibility of the reduction of the
voltage asymmetry of hall probes. |
| format | Article |
| id | doaj-art-75fd5f5a56be4286acd9a12b4ed8c67c |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2020-03-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-75fd5f5a56be4286acd9a12b4ed8c67c2025-02-02T12:37:34ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412020-03-011 (169)677210.25206/1813-8225-2020-169-67-72Probe device for electrical measurements of parameters thin doped films ZnOA. I. Blesman0https://orcid.org/0000-0003-2837-3469R. B. Burlakov1Omsk State Technical UniversityDostoevsky Omsk State UniversityProbe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin films ZnO with thickness in the interval (0,065–0,3) μm concentration of electrons of the conductivity in the interval (2–3,4)∙1019 cm–3 and low mobility of electrons of the conductivity — (4–8,5) cm2 /B∙s. Dignity of probe device is a possibility of the reduction of the voltage asymmetry of hall probes.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdfelectrical measurements of parametersprobe devicehall effect methodthin films zno |
| spellingShingle | A. I. Blesman R. B. Burlakov Probe device for electrical measurements of parameters thin doped films ZnO Омский научный вестник electrical measurements of parameters probe device hall effect method thin films zno |
| title | Probe device for electrical measurements of parameters thin doped films ZnO |
| title_full | Probe device for electrical measurements of parameters thin doped films ZnO |
| title_fullStr | Probe device for electrical measurements of parameters thin doped films ZnO |
| title_full_unstemmed | Probe device for electrical measurements of parameters thin doped films ZnO |
| title_short | Probe device for electrical measurements of parameters thin doped films ZnO |
| title_sort | probe device for electrical measurements of parameters thin doped films zno |
| topic | electrical measurements of parameters probe device hall effect method thin films zno |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
| work_keys_str_mv | AT aiblesman probedeviceforelectricalmeasurementsofparametersthindopedfilmszno AT rbburlakov probedeviceforelectricalmeasurementsofparametersthindopedfilmszno |