Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation of the degradation effects related to the component micronic structure, and points out the degraded...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213500 |
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| _version_ | 1832556278499508224 |
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| author | M. Zoaeter B. Beydoun M. Hajjar M. Debs J-P Charles |
| author_facet | M. Zoaeter B. Beydoun M. Hajjar M. Debs J-P Charles |
| author_sort | M. Zoaeter |
| collection | DOAJ |
| description | The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation of the degradation effects related to the component micronic structure, and points out the degraded parameters following this stress. |
| format | Article |
| id | doaj-art-75e6c6943e63408da2daeffec456d3ee |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-75e6c6943e63408da2daeffec456d3ee2025-02-03T05:45:54ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-0125321522310.1080/08827510213500Analysis and Simulation of Functional Stress Degradation on VDOMS Power TransistorsM. Zoaeter0B. Beydoun1M. Hajjar2M. Debs3J-P Charles4Laboratoire de Physique des Matériaux, Faculty of Science-I, Lebanese University, P.O.Box 13-5789, Beirut 1102-2070, LebanonLaboratoire de Physique des Matériaux, Faculty of Science-I, Lebanese University, P.O.Box 13-5789, Beirut 1102-2070, LebanonLaboratoire de Physique des Matériaux, Faculty of Science-I, Lebanese University, P.O.Box 13-5789, Beirut 1102-2070, LebanonLaboratoire de Physique des Matériaux, Faculty of Science-I, Lebanese University, P.O.Box 13-5789, Beirut 1102-2070, LebanonMatériaux Optiques, Photonique et Systèmes (MOPS), CLOES, Supelec, 2, rue Edouard Belin, Metz 57070, FranceThe use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation of the degradation effects related to the component micronic structure, and points out the degraded parameters following this stress.http://dx.doi.org/10.1080/08827510213500 |
| spellingShingle | M. Zoaeter B. Beydoun M. Hajjar M. Debs J-P Charles Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors Active and Passive Electronic Components |
| title | Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors |
| title_full | Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors |
| title_fullStr | Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors |
| title_full_unstemmed | Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors |
| title_short | Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors |
| title_sort | analysis and simulation of functional stress degradation on vdoms power transistors |
| url | http://dx.doi.org/10.1080/08827510213500 |
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