Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction
In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on th...
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2024-12-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/28 |
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| author | Zhuang Zhao Yang Liu Peixian Li Xiaowei Zhou Bo Yang Yingru Xiang Junchun Bai |
| author_facet | Zhuang Zhao Yang Liu Peixian Li Xiaowei Zhou Bo Yang Yingru Xiang Junchun Bai |
| author_sort | Zhuang Zhao |
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| description | In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ. At a current of 140 mA, this method demonstrates effective current expansion. Our results not only improve the performance of UV LEDs but also provide an important theoretical and experimental basis for future research on UV LEDs based on superlattice TJ. In addition, our study also highlights the key role of group III nitride materials in achieving efficient UV luminescence, and the polarization characteristics and band structure of these materials are critical for optimizing carrier injection and recombination processes. |
| format | Article |
| id | doaj-art-74e46d6a5e3344559fcc5c789e7556d9 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-74e46d6a5e3344559fcc5c789e7556d92025-01-24T13:41:53ZengMDPI AGMicromachines2072-666X2024-12-011612810.3390/mi16010028Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling JunctionZhuang Zhao0Yang Liu1Peixian Li2Xiaowei Zhou3Bo Yang4Yingru Xiang5Junchun Bai6School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an 710071, ChinaIn this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ. At a current of 140 mA, this method demonstrates effective current expansion. Our results not only improve the performance of UV LEDs but also provide an important theoretical and experimental basis for future research on UV LEDs based on superlattice TJ. In addition, our study also highlights the key role of group III nitride materials in achieving efficient UV luminescence, and the polarization characteristics and band structure of these materials are critical for optimizing carrier injection and recombination processes.https://www.mdpi.com/2072-666X/16/1/28ultraviolet light-emitting diodestunnel junctionAPSYS |
| spellingShingle | Zhuang Zhao Yang Liu Peixian Li Xiaowei Zhou Bo Yang Yingru Xiang Junchun Bai Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction Micromachines ultraviolet light-emitting diodes tunnel junction APSYS |
| title | Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction |
| title_full | Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction |
| title_fullStr | Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction |
| title_full_unstemmed | Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction |
| title_short | Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction |
| title_sort | performance study of ultraviolet algan gan light emitting diodes based on superlattice tunneling junction |
| topic | ultraviolet light-emitting diodes tunnel junction APSYS |
| url | https://www.mdpi.com/2072-666X/16/1/28 |
| work_keys_str_mv | AT zhuangzhao performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT yangliu performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT peixianli performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT xiaoweizhou performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT boyang performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT yingruxiang performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction AT junchunbai performancestudyofultravioletalganganlightemittingdiodesbasedonsuperlatticetunnelingjunction |