Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P<sup>+</sup> rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edg...
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MDPI AG
2024-12-01
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| author | Sangyeob Kim Ogyun Seok |
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| description | We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P<sup>+</sup> rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q<sub>eff</sub>) in the termination structures. The TRA-JTE forms with the identical P-type epitaxial layer, which enables high-efficiency hole injection and conductivity modulation. The effects of major design parameters for the TRA-JTE, such as the number of trenches (N<sub>trench</sub>) and depth of trenches (D<sub>trench</sub>), were analyzed to obtain reliable blocking capabilities. Furthermore, the single-zone-JTE (SZ-JTE), ring-assisted-JTE (RA-JTE), and trenched-JTE (T-JTE) were also evaluated for comparative analysis. Our results show that the TRA-JTE exhibited the highest breakdown voltage (BV), exceeding 4.2 kV, and the strongest tolerance against variance in doping concentration for the JTE (N<sub>JTE</sub>) compared to both the RA-JTE and T-JTE due to the charge-balanced edge termination by multiple P<sup>+</sup> rings and trench structures. |
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| institution | Kabale University |
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| series | Micromachines |
| spelling | doaj-art-74688708edd943e3aea22eec68afa34c2025-01-24T13:41:57ZengMDPI AGMicromachines2072-666X2024-12-011614710.3390/mi16010047Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial LayersSangyeob Kim0Ogyun Seok1Department of Semiconductor System Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaSchool of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of KoreaWe demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P<sup>+</sup> rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q<sub>eff</sub>) in the termination structures. The TRA-JTE forms with the identical P-type epitaxial layer, which enables high-efficiency hole injection and conductivity modulation. The effects of major design parameters for the TRA-JTE, such as the number of trenches (N<sub>trench</sub>) and depth of trenches (D<sub>trench</sub>), were analyzed to obtain reliable blocking capabilities. Furthermore, the single-zone-JTE (SZ-JTE), ring-assisted-JTE (RA-JTE), and trenched-JTE (T-JTE) were also evaluated for comparative analysis. Our results show that the TRA-JTE exhibited the highest breakdown voltage (BV), exceeding 4.2 kV, and the strongest tolerance against variance in doping concentration for the JTE (N<sub>JTE</sub>) compared to both the RA-JTE and T-JTE due to the charge-balanced edge termination by multiple P<sup>+</sup> rings and trench structures.https://www.mdpi.com/2072-666X/16/1/47silicon carbide (SiC)edge terminationjunction termination extension (JTE)P-type epitaxial growthtrenched ring-assisted-JTE (TRA-JTE)PiN diode |
| spellingShingle | Sangyeob Kim Ogyun Seok Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers Micromachines silicon carbide (SiC) edge termination junction termination extension (JTE) P-type epitaxial growth trenched ring-assisted-JTE (TRA-JTE) PiN diode |
| title | Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers |
| title_full | Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers |
| title_fullStr | Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers |
| title_full_unstemmed | Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers |
| title_short | Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers |
| title_sort | designs of charge balanced edge termination structures for 3 3 kv sic power devices using pn multi epitaxial layers |
| topic | silicon carbide (SiC) edge termination junction termination extension (JTE) P-type epitaxial growth trenched ring-assisted-JTE (TRA-JTE) PiN diode |
| url | https://www.mdpi.com/2072-666X/16/1/47 |
| work_keys_str_mv | AT sangyeobkim designsofchargebalancededgeterminationstructuresfor33kvsicpowerdevicesusingpnmultiepitaxiallayers AT ogyunseok designsofchargebalancededgeterminationstructuresfor33kvsicpowerdevicesusingpnmultiepitaxiallayers |