Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P<sup>+</sup> rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edg...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/1/47 |
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| Summary: | We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P<sup>+</sup> rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q<sub>eff</sub>) in the termination structures. The TRA-JTE forms with the identical P-type epitaxial layer, which enables high-efficiency hole injection and conductivity modulation. The effects of major design parameters for the TRA-JTE, such as the number of trenches (N<sub>trench</sub>) and depth of trenches (D<sub>trench</sub>), were analyzed to obtain reliable blocking capabilities. Furthermore, the single-zone-JTE (SZ-JTE), ring-assisted-JTE (RA-JTE), and trenched-JTE (T-JTE) were also evaluated for comparative analysis. Our results show that the TRA-JTE exhibited the highest breakdown voltage (BV), exceeding 4.2 kV, and the strongest tolerance against variance in doping concentration for the JTE (N<sub>JTE</sub>) compared to both the RA-JTE and T-JTE due to the charge-balanced edge termination by multiple P<sup>+</sup> rings and trench structures. |
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| ISSN: | 2072-666X |