Kim, S., & Seok, O. Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers. MDPI AG.
Chicago Style (17th ed.) CitationKim, Sangyeob, and Ogyun Seok. Designs of Charge-Balanced Edge Termination Structures for 3.3 KV SiC Power Devices Using PN Multi-Epitaxial Layers. MDPI AG.
MLA (9th ed.) CitationKim, Sangyeob, and Ogyun Seok. Designs of Charge-Balanced Edge Termination Structures for 3.3 KV SiC Power Devices Using PN Multi-Epitaxial Layers. MDPI AG.
Warning: These citations may not always be 100% accurate.