Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications
In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts. Their performance is first assessed by Photoconductance Decay (PCD) measurements on symmetrical and asymmetrical cell precur...
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| Format: | Article |
| Language: | English |
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TIB Open Publishing
2025-02-01
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| Series: | SiliconPV Conference Proceedings |
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| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1310 |
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| author | Julci Ditsougou Thibaut Desrues Anne Kaminski Sébastien Dubois |
| author_facet | Julci Ditsougou Thibaut Desrues Anne Kaminski Sébastien Dubois |
| author_sort | Julci Ditsougou |
| collection | DOAJ |
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In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts. Their performance is first assessed by Photoconductance Decay (PCD) measurements on symmetrical and asymmetrical cell precursors before being evaluated on cells by I-V characterizations. We show that high-temperature annealing of poly-Si layers is responsible for excessive dopants penetration in the substrate, which can then be limited by the presence of a thicker poly-Si layer. Moreover, these thicker poly-Si layers benefit more from hydrogenation steps, enabling i-Voc of around 720 mV and carrier lifetimes of up to 5 ms on cell precursors. Finally, while increasing the thickness leads to current limitation under AM1.5G (1 Sun) illumination, this limitation is less pronounced under IR illumination. We therefore demonstrate that for tandem applications, the bottom-cell can benefit from a gain in Voc and FF without suffering from a major optical limitation.
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| format | Article |
| id | doaj-art-73eb7fdf56e54730ac9cb5188233179b |
| institution | Kabale University |
| issn | 2940-2123 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | TIB Open Publishing |
| record_format | Article |
| series | SiliconPV Conference Proceedings |
| spelling | doaj-art-73eb7fdf56e54730ac9cb5188233179b2025-02-04T09:54:11ZengTIB Open PublishingSiliconPV Conference Proceedings2940-21232025-02-01210.52825/siliconpv.v2i.1310Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells ApplicationsJulci Ditsougou0https://orcid.org/0009-0003-3798-3354Thibaut Desrues1Anne Kaminski2Sébastien Dubois3https://orcid.org/0000-0002-3003-2981CEA LITENCEA LITENGrenoble Institute of TechnologyCEA LITEN In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts. Their performance is first assessed by Photoconductance Decay (PCD) measurements on symmetrical and asymmetrical cell precursors before being evaluated on cells by I-V characterizations. We show that high-temperature annealing of poly-Si layers is responsible for excessive dopants penetration in the substrate, which can then be limited by the presence of a thicker poly-Si layer. Moreover, these thicker poly-Si layers benefit more from hydrogenation steps, enabling i-Voc of around 720 mV and carrier lifetimes of up to 5 ms on cell precursors. Finally, while increasing the thickness leads to current limitation under AM1.5G (1 Sun) illumination, this limitation is less pronounced under IR illumination. We therefore demonstrate that for tandem applications, the bottom-cell can benefit from a gain in Voc and FF without suffering from a major optical limitation. https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1310TOPconPassivated ContactHydrogenationSolar CellBottom-Cell2T Tandem |
| spellingShingle | Julci Ditsougou Thibaut Desrues Anne Kaminski Sébastien Dubois Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications SiliconPV Conference Proceedings TOPcon Passivated Contact Hydrogenation Solar Cell Bottom-Cell 2T Tandem |
| title | Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications |
| title_full | Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications |
| title_fullStr | Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications |
| title_full_unstemmed | Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications |
| title_short | Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications |
| title_sort | optimization of poly si siox passivated contacts for crystalline silicon bottom cells applications |
| topic | TOPcon Passivated Contact Hydrogenation Solar Cell Bottom-Cell 2T Tandem |
| url | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1310 |
| work_keys_str_mv | AT julciditsougou optimizationofpolysisioxpassivatedcontactsforcrystallinesiliconbottomcellsapplications AT thibautdesrues optimizationofpolysisioxpassivatedcontactsforcrystallinesiliconbottomcellsapplications AT annekaminski optimizationofpolysisioxpassivatedcontactsforcrystallinesiliconbottomcellsapplications AT sebastiendubois optimizationofpolysisioxpassivatedcontactsforcrystallinesiliconbottomcellsapplications |