Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

Abstract In this study, we designed and analyzed a single-transistor dynamic random-access memory (1 T-DRAM) based on an arch-shaped gate-all-around tunnel field-effect transistor (GAA ARCH-TFET), featuring an Si/SiGe heterostructure, for high-density memory applications. Unlike conventional 1 T-DRA...

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Bibliographic Details
Main Authors: Seung Ji Bae, Sang Ho Lee, Jin Park, Min Seok Kim, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin-Hyuk Bae, In Man Kang
Format: Article
Language:English
Published: Springer 2025-04-01
Series:Discover Nano
Subjects:
Band-to-band
Tunneling
Capacitorless dynamic random-access memory
Gate-all-around
Heterostructure
SiGe
Online Access:https://doi.org/10.1186/s11671-025-04233-7
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https://doi.org/10.1186/s11671-025-04233-7

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