An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/320320 |
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