An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/320320 |
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| _version_ | 1832551353278267392 |
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| author | Kuan-Chou Lin Wei-Wen Ding Meng-Hsueh Chiang |
| author_facet | Kuan-Chou Lin Wei-Wen Ding Meng-Hsueh Chiang |
| author_sort | Kuan-Chou Lin |
| collection | DOAJ |
| description | A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers. |
| format | Article |
| id | doaj-art-715042aaa6eb4052b0ce0996fd947d4d |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-715042aaa6eb4052b0ce0996fd947d4d2025-02-03T06:01:41ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422015-01-01201510.1155/2015/320320320320An Analytical Gate-All-Around MOSFET Model for Circuit SimulationKuan-Chou Lin0Wei-Wen Ding1Meng-Hsueh Chiang2MS Degree Program on Nano-IC Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Electronic Engineering, National Ilan University, I-Lan 260, TaiwanMS Degree Program on Nano-IC Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanA generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.http://dx.doi.org/10.1155/2015/320320 |
| spellingShingle | Kuan-Chou Lin Wei-Wen Ding Meng-Hsueh Chiang An Analytical Gate-All-Around MOSFET Model for Circuit Simulation Advances in Materials Science and Engineering |
| title | An Analytical Gate-All-Around MOSFET Model for Circuit Simulation |
| title_full | An Analytical Gate-All-Around MOSFET Model for Circuit Simulation |
| title_fullStr | An Analytical Gate-All-Around MOSFET Model for Circuit Simulation |
| title_full_unstemmed | An Analytical Gate-All-Around MOSFET Model for Circuit Simulation |
| title_short | An Analytical Gate-All-Around MOSFET Model for Circuit Simulation |
| title_sort | analytical gate all around mosfet model for circuit simulation |
| url | http://dx.doi.org/10.1155/2015/320320 |
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