High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and struct...
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| Format: | Article |
| Language: | English |
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Wiley
1987-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/1987/49720 |
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| _version_ | 1832551052918915072 |
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| author | G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk |
| author_facet | G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk |
| author_sort | G. Beensh-Marchwicka |
| collection | DOAJ |
| description | Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere
with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature
range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is
described. |
| format | Article |
| id | doaj-art-712cafcd36b64dc99781249b3589bb21 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1987-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-712cafcd36b64dc99781249b3589bb212025-02-03T06:05:10ZengWileyActive and Passive Electronic Components0882-75161563-50311987-01-0112319120010.1155/1987/49720High Temperature Oxidized SnO2 Films Prepared by Reactive SputteringG. Beensh-Marchwicka0L. Król-Stępniewska1A. Misiuk2Institute of Electron Technology of Wroclaw, Technical University, Janiszewskiego 11-17, Wroclaw 50-372, PolandInstitute of Electron Technology of Wroclaw, Technical University, Janiszewskiego 11-17, Wroclaw 50-372, PolandHigh Pressure Research Centre, Polish Academy of Sciences, Sokolowska 29, Warsaw 01-142, PolandUndoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.http://dx.doi.org/10.1155/1987/49720thin filmsundoped and Sb-doped tin dioxideresistivitystructureheat treatmentoxygen environment. |
| spellingShingle | G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering Active and Passive Electronic Components thin films undoped and Sb-doped tin dioxide resistivity structure heat treatment oxygen environment. |
| title | High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering |
| title_full | High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering |
| title_fullStr | High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering |
| title_full_unstemmed | High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering |
| title_short | High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering |
| title_sort | high temperature oxidized sno2 films prepared by reactive sputtering |
| topic | thin films undoped and Sb-doped tin dioxide resistivity structure heat treatment oxygen environment. |
| url | http://dx.doi.org/10.1155/1987/49720 |
| work_keys_str_mv | AT gbeenshmarchwicka hightemperatureoxidizedsno2filmspreparedbyreactivesputtering AT lkrolstepniewska hightemperatureoxidizedsno2filmspreparedbyreactivesputtering AT amisiuk hightemperatureoxidizedsno2filmspreparedbyreactivesputtering |