Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method
ZnO/Ag/ZnO (ZAZ) and ZnO/Cu/ZnO (ZCZ) were prepared. The dependence of crystalline, electrical, and optical properties for the multilayer on the postdeposition annealing (PDA) was studied. After PDA of 300°C for 20 min, the diffusion of Cu in ZnO occurs; this result is responsible for the increasing...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/7258687 |
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| author | Pang Shiu Chen Cheng-Hsiung Peng Yu-Wei Chang Tzu Wei Lin S. W. Lee |
| author_facet | Pang Shiu Chen Cheng-Hsiung Peng Yu-Wei Chang Tzu Wei Lin S. W. Lee |
| author_sort | Pang Shiu Chen |
| collection | DOAJ |
| description | ZnO/Ag/ZnO (ZAZ) and ZnO/Cu/ZnO (ZCZ) were prepared. The dependence of crystalline, electrical, and optical properties for the multilayer on the postdeposition annealing (PDA) was studied. After PDA of 300°C for 20 min, the diffusion of Cu in ZnO occurs; this result is responsible for the increasing resistance of the annealed ZCZ. Ag with a thickness of 10 nm was deposited upon ZnO. The interface of ZnO and Ag is clearly revealed by high resolution transmission electron microscopy. The crystalline of ZnO and Ag films in the ZAZ with a sheet resistance (Rs) down to 4.17 Ω/sq. The ZAZ layer shows a better thermal stability (up to 400°C) than that of the ZCZ ones. The PDA degraded slightly the optical transmittance and increases the conductivity of ZAZ layer. The figure of merit (FOM) is applied to analysis of the ZAZ layer. The PDA can enhance the FOM of the ZAZ with Ag thickness >8 nm. The resulting Rs and the transmittance ZAZ layers were analyzed by the Taguchi method to obtain the appropriate parameters. The optimized ZAZ has been verified with a Rs of 2.3 Ω/sq, a high transmittance (71%), and the optimal FOM of 1.41 × 10−2 Ω−1. |
| format | Article |
| id | doaj-art-70e690363112489dacad40f7c7ad6209 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-70e690363112489dacad40f7c7ad62092025-02-03T06:45:58ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/72586877258687Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design MethodPang Shiu Chen0Cheng-Hsiung Peng1Yu-Wei Chang2Tzu Wei Lin3S. W. Lee4Department of Chemical and Materials Engineering, MingHsin University of Science and Technology, Hsinfeng, Hsinchu 30401, TaiwanDepartment of Chemical and Materials Engineering, MingHsin University of Science and Technology, Hsinfeng, Hsinchu 30401, TaiwanDepartment of Chemical and Materials Engineering, MingHsin University of Science and Technology, Hsinfeng, Hsinchu 30401, TaiwanInstitute of Materials Science and Engineering, National Central University, Chung-Li, Tau Yuan 32001, TaiwanInstitute of Materials Science and Engineering, National Central University, Chung-Li, Tau Yuan 32001, TaiwanZnO/Ag/ZnO (ZAZ) and ZnO/Cu/ZnO (ZCZ) were prepared. The dependence of crystalline, electrical, and optical properties for the multilayer on the postdeposition annealing (PDA) was studied. After PDA of 300°C for 20 min, the diffusion of Cu in ZnO occurs; this result is responsible for the increasing resistance of the annealed ZCZ. Ag with a thickness of 10 nm was deposited upon ZnO. The interface of ZnO and Ag is clearly revealed by high resolution transmission electron microscopy. The crystalline of ZnO and Ag films in the ZAZ with a sheet resistance (Rs) down to 4.17 Ω/sq. The ZAZ layer shows a better thermal stability (up to 400°C) than that of the ZCZ ones. The PDA degraded slightly the optical transmittance and increases the conductivity of ZAZ layer. The figure of merit (FOM) is applied to analysis of the ZAZ layer. The PDA can enhance the FOM of the ZAZ with Ag thickness >8 nm. The resulting Rs and the transmittance ZAZ layers were analyzed by the Taguchi method to obtain the appropriate parameters. The optimized ZAZ has been verified with a Rs of 2.3 Ω/sq, a high transmittance (71%), and the optimal FOM of 1.41 × 10−2 Ω−1.http://dx.doi.org/10.1155/2016/7258687 |
| spellingShingle | Pang Shiu Chen Cheng-Hsiung Peng Yu-Wei Chang Tzu Wei Lin S. W. Lee Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method Advances in Materials Science and Engineering |
| title | Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method |
| title_full | Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method |
| title_fullStr | Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method |
| title_full_unstemmed | Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method |
| title_short | Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method |
| title_sort | improved indium free transparent zno metal zno electrode through a statistical experimental design method |
| url | http://dx.doi.org/10.1155/2016/7258687 |
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