Amorphous Engineering Driving d‐Orbital High Spin Configuration for Almost 100% 1O2‐Mediated Fenton‐Like Reactions

Abstract The inherent atomic disorder in amorphous materials leads to unsaturated atomic sites or dangling bonds, effectively modulating the material's electronic states and rendering it an ideal platform for the growth of single atoms. Herein, the electronic structure of isolated cobalt atoms...

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Bibliographic Details
Main Authors: Juanjuan Qi, Qian Bai, Xiuhui Bai, Hongfei Gu, Siyue Lu, Siyang Chen, Qiangwei Li, Xudong Yang, Jianhui Wang, Lidong Wang
Format: Article
Language:English
Published: Wiley 2025-07-01
Series:Advanced Science
Subjects:
Online Access:https://doi.org/10.1002/advs.202503665
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