Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics

Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics

Abstract Edge computing architectures are intended to store and process data nearby the sensor, while ensuring fast and safe data processing, low power consumption and cost minimization. The stability, mechanical flexibility, huge computational and storage requirements needed for these applications...

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Main Authors: Sabrina Calvi, Marco Bertelli, Sara De Simone, Francesco Maita, Simone Prili, Adriano Diaz Fattorini, Fabio De Matteis, Valentina Mussi, Flavia Righi Riva, Massimo Longo, Fabrizio Arciprete, Raffaella Calarco
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
edge electronics
flexible electronics
Ge‐rich alloys
Ge–Sb–Te (GST)
phase‐change materials (PCM)
Online Access:https://doi.org/10.1002/aelm.202400184
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https://doi.org/10.1002/aelm.202400184

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