TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization
Threshold control of amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) is generally a critical issue through material composition adjustment. Instead, this work reports a cylindrical vertical double-surrounding-gate (DSG) a-IGZO FET, featuring flexibility of threshold modulation, by the 3-D...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10836807/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|