THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS
We employed tight-binding calculations and Green’s function formalism to investigate the effect of applied electric fields on the energy band and electronic properties of bilayer armchair graphene nanoribbons (BL-AGNRs). The results show that the perpendicular electric field has a strong impact on m...
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| Format: | Article |
| Language: | English |
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Dalat University
2021-12-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
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| Online Access: | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/973 |
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| author | Lam Thuy Duong Nguyen Thi Kim Quyen Nguyen Nguyen Huu Hanh Pham Dang Khoa Le Van Chinh Ngo Thi Kim Loan Phan Anh Huy Huynh Thanh Tra Vu |
| author_facet | Lam Thuy Duong Nguyen Thi Kim Quyen Nguyen Nguyen Huu Hanh Pham Dang Khoa Le Van Chinh Ngo Thi Kim Loan Phan Anh Huy Huynh Thanh Tra Vu |
| author_sort | Lam Thuy Duong Nguyen |
| collection | DOAJ |
| description | We employed tight-binding calculations and Green’s function formalism to investigate the effect of applied electric fields on the energy band and electronic properties of bilayer armchair graphene nanoribbons (BL-AGNRs). The results show that the perpendicular electric field has a strong impact on modifying and controlling the bandgap of BL-AGNRs. At the critical values of this electric field, distortions of energy dispersion in subbands and the formation of new electronic excitation channels occur strongly. These originate from low-lying energies near the Fermi level and move away from the zero-point with the increment of the electric field. Phase transitions and structural changes clearly happen in these materials. The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. These results contribute to an overall picture of the physics model and electronic structure of BL-AGNRs under stimuli, which can be a pathway to real applications in the future, particularly for electronic devices. |
| format | Article |
| id | doaj-art-6f8961ee1c504f638acdbe8bd6c6feb1 |
| institution | Kabale University |
| issn | 0866-787X |
| language | English |
| publishDate | 2021-12-01 |
| publisher | Dalat University |
| record_format | Article |
| series | Tạp chí Khoa học Đại học Đà Lạt |
| spelling | doaj-art-6f8961ee1c504f638acdbe8bd6c6feb12025-02-03T05:07:44ZengDalat UniversityTạp chí Khoa học Đại học Đà Lạt0866-787X2021-12-019811210.37569/DalatUniversity.11.4.973(2021)1028THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONSLam Thuy Duong Nguyen0Thi Kim Quyen Nguyen1Nguyen Huu Hanh Pham2Dang Khoa Le3Van Chinh Ngo4Thi Kim Loan Phan5Anh Huy Huynh6Thanh Tra Vu7Can Tho UniversityCan Tho UniversityCan Tho UniversityCan Tho UniversityHo Thi Ky High SchoolCan Tho UniversityCan Tho UniversityCan Tho UniversityWe employed tight-binding calculations and Green’s function formalism to investigate the effect of applied electric fields on the energy band and electronic properties of bilayer armchair graphene nanoribbons (BL-AGNRs). The results show that the perpendicular electric field has a strong impact on modifying and controlling the bandgap of BL-AGNRs. At the critical values of this electric field, distortions of energy dispersion in subbands and the formation of new electronic excitation channels occur strongly. These originate from low-lying energies near the Fermi level and move away from the zero-point with the increment of the electric field. Phase transitions and structural changes clearly happen in these materials. The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. These results contribute to an overall picture of the physics model and electronic structure of BL-AGNRs under stimuli, which can be a pathway to real applications in the future, particularly for electronic devices.https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/973bilayer armchair graphene nanoribbonselectronic band structuresparallel electric fieldperpendicular electric field. |
| spellingShingle | Lam Thuy Duong Nguyen Thi Kim Quyen Nguyen Nguyen Huu Hanh Pham Dang Khoa Le Van Chinh Ngo Thi Kim Loan Phan Anh Huy Huynh Thanh Tra Vu THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS Tạp chí Khoa học Đại học Đà Lạt bilayer armchair graphene nanoribbons electronic band structures parallel electric field perpendicular electric field. |
| title | THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS |
| title_full | THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS |
| title_fullStr | THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS |
| title_full_unstemmed | THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS |
| title_short | THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS |
| title_sort | effect of critical electric fields on the electronic distribution of bilayer armchair graphene nanoribbons |
| topic | bilayer armchair graphene nanoribbons electronic band structures parallel electric field perpendicular electric field. |
| url | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/973 |
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