Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Abstract Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the int...

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Bibliographic Details
Main Authors: Anirudh Kumar, Kirti Bhardwaj, Satendra Pal Singh, Youngmin Lee, Sejoon Lee, Mohit Kumar, Sanjeev K. Sharma
Format: Article
Language:English
Published: Wiley 2025-03-01
Series:InfoMat
Subjects:
memory capacity
metal oxide–polymer nanocomposites
multifunctional artificial synapse
optoelectronic ReRAM
switching mechanism
Online Access:https://doi.org/10.1002/inf2.12644
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https://doi.org/10.1002/inf2.12644

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