APA (7th ed.) Citation

Chabungbam, A. S., Kim, D., Wang, Y., Kang, K., Kim, M., & Park, H. Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor. Elsevier.

Chicago Style (17th ed.) Citation

Chabungbam, Akendra Singh, Dong-eun Kim, Yue Wang, Kyung-Mun Kang, Minjae Kim, and Hyung-Ho Park. Oxygen Vacancy-controlled Forming-free Bipolar Resistive Switching in Er-doped ZnO Memristor. Elsevier.

MLA (9th ed.) Citation

Chabungbam, Akendra Singh, et al. Oxygen Vacancy-controlled Forming-free Bipolar Resistive Switching in Er-doped ZnO Memristor. Elsevier.