Preparation of a Counter Electrode with P-Type NiO and Its Applications in Dye-Sensitized Solar Cell
This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO) on a dye-sensitized solar cell (DSSC). The counter electrode is fabricated by depositing an NiO film on top of a Pt film, which has been deposited on a Fluorine-doped tin oxide (FTO) glas...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2010/902385 |
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| Summary: | This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO) on a dye-sensitized solar cell (DSSC). The counter electrode is fabricated by depositing an NiO film on top of a Pt film, which has been deposited on a Fluorine-doped tin oxide (FTO) glass using an ion-sputtering coater (or E-beam evaporator), using a simple spin coating method. This study also examines the effect of the average thickness of TiO2 film deposited on a working electrode upon the power conversion efficiency of a DSSC. This study shows that the power conversion efficiency of a DSSC with a Pt(E)/NiO counter electrode (4.28%) substantially exceeds that of a conventional DSSC with a Pt(E) counter electrode (3.16%) on which a Pt film was deposited using an E-beam evaporator. This result is attributed to the fact that the NiO film coated on the Pt(E) counter electrode improves the electrocatalytic activity of the counter electrode. |
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| ISSN: | 1110-662X 1687-529X |