Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment
Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoOx) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoOx/p-Si(100) interface, which shows the expected quality in terms of...
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| Format: | Article |
| Language: | English |
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Wiley
2020-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2020/8865010 |
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| author | Chin-Lung Cheng Chi-Chung Liu Chih-Chieh Hsu |
| author_facet | Chin-Lung Cheng Chi-Chung Liu Chih-Chieh Hsu |
| author_sort | Chin-Lung Cheng |
| collection | DOAJ |
| description | Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoOx) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoOx/p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoOx/p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoOx interface. |
| format | Article |
| id | doaj-art-6934b13f60044006a2789710fcddf0f8 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2020-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-6934b13f60044006a2789710fcddf0f82025-02-03T01:28:28ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2020-01-01202010.1155/2020/88650108865010Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma PretreatmentChin-Lung Cheng0Chi-Chung Liu1Chih-Chieh Hsu2Department of Electro-Optical Engineering, National Formosa University, Yunlin 63201, TaiwanDepartment of Electro-Optical Engineering, National Formosa University, Yunlin 63201, TaiwanDepartment of Electro-Optical Engineering, National Formosa University, Yunlin 63201, TaiwanPhotovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoOx) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoOx/p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoOx/p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoOx interface.http://dx.doi.org/10.1155/2020/8865010 |
| spellingShingle | Chin-Lung Cheng Chi-Chung Liu Chih-Chieh Hsu Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment International Journal of Photoenergy |
| title | Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment |
| title_full | Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment |
| title_fullStr | Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment |
| title_full_unstemmed | Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment |
| title_short | Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment |
| title_sort | photovoltaic and charge trapping characteristics of screen printed monocrystalline silicon solar cells with molybdenum oxides as hole selective layers by h2 ar plasma pretreatment |
| url | http://dx.doi.org/10.1155/2020/8865010 |
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