PSO-Aided Inverse Design of Silicon Modulator
Optimizing doping profiles has always been a key approach to enhance the performance of silicon modulators. Nevertheless, the pursuit of innovative profiles has encountered barriers in recent times. To tackle this issue, the idea of inverse design, widely adopted in passive photonic devices, can be...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10449367/ |
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| author | Zijian Zhu Yingxuan Zhao Zhen Sheng Fuwan Gan |
| author_facet | Zijian Zhu Yingxuan Zhao Zhen Sheng Fuwan Gan |
| author_sort | Zijian Zhu |
| collection | DOAJ |
| description | Optimizing doping profiles has always been a key approach to enhance the performance of silicon modulators. Nevertheless, the pursuit of innovative profiles has encountered barriers in recent times. To tackle this issue, the idea of inverse design, widely adopted in passive photonic devices, can be employed in silicon active devices. As a result, we incorporate the inverse design method with the particle swarm optimization (PSO) algorithm and achieve a G-shaped doping profile for the modulator, exhibiting superior <inline-formula><tex-math notation="LaTeX">$V_{\pi } L$</tex-math></inline-formula> of 0.68 V<inline-formula><tex-math notation="LaTeX">$\cdot$</tex-math></inline-formula>cm and low loss of 9.3 dB/cm. The small-signal frequency response suggests a reliable operation range under reverse biases of 1<inline-formula><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula>3 V with the bandwidth over 26 GHz. The silicon modulator with a G-shaped design demonstrates remarkable efficiency in modulation and very low loss, suggesting its great potential for application in microwave front-end systems. The use of inverse design shows great potential in enhancing active silicon photonic devices, allowing for faster, higher-capacity, and more reliable data communication systems. |
| format | Article |
| id | doaj-art-6825895979874519a2eb106966ac7296 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-6825895979874519a2eb106966ac72962025-01-24T00:00:19ZengIEEEIEEE Photonics Journal1943-06552024-01-011621510.1109/JPHOT.2024.337018210449367PSO-Aided Inverse Design of Silicon ModulatorZijian Zhu0https://orcid.org/0009-0004-9310-8754Yingxuan Zhao1https://orcid.org/0000-0002-8010-2845Zhen Sheng2https://orcid.org/0000-0002-3252-7291Fuwan Gan3https://orcid.org/0000-0003-2870-1426University of Chinese Academy of Sciences, Beijing, ChinaShanghai Institute of Microsystem and Information Technology, Shanghai, ChinaShanghai Institute of Microsystem and Information Technology, Shanghai, ChinaUniversity of Chinese Academy of Sciences, Beijing, ChinaOptimizing doping profiles has always been a key approach to enhance the performance of silicon modulators. Nevertheless, the pursuit of innovative profiles has encountered barriers in recent times. To tackle this issue, the idea of inverse design, widely adopted in passive photonic devices, can be employed in silicon active devices. As a result, we incorporate the inverse design method with the particle swarm optimization (PSO) algorithm and achieve a G-shaped doping profile for the modulator, exhibiting superior <inline-formula><tex-math notation="LaTeX">$V_{\pi } L$</tex-math></inline-formula> of 0.68 V<inline-formula><tex-math notation="LaTeX">$\cdot$</tex-math></inline-formula>cm and low loss of 9.3 dB/cm. The small-signal frequency response suggests a reliable operation range under reverse biases of 1<inline-formula><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula>3 V with the bandwidth over 26 GHz. The silicon modulator with a G-shaped design demonstrates remarkable efficiency in modulation and very low loss, suggesting its great potential for application in microwave front-end systems. The use of inverse design shows great potential in enhancing active silicon photonic devices, allowing for faster, higher-capacity, and more reliable data communication systems.https://ieeexplore.ieee.org/document/10449367/Silicon photonicselectro-optic modulatorinverse designdoping profilealgorithmfigure of merit |
| spellingShingle | Zijian Zhu Yingxuan Zhao Zhen Sheng Fuwan Gan PSO-Aided Inverse Design of Silicon Modulator IEEE Photonics Journal Silicon photonics electro-optic modulator inverse design doping profile algorithm figure of merit |
| title | PSO-Aided Inverse Design of Silicon Modulator |
| title_full | PSO-Aided Inverse Design of Silicon Modulator |
| title_fullStr | PSO-Aided Inverse Design of Silicon Modulator |
| title_full_unstemmed | PSO-Aided Inverse Design of Silicon Modulator |
| title_short | PSO-Aided Inverse Design of Silicon Modulator |
| title_sort | pso aided inverse design of silicon modulator |
| topic | Silicon photonics electro-optic modulator inverse design doping profile algorithm figure of merit |
| url | https://ieeexplore.ieee.org/document/10449367/ |
| work_keys_str_mv | AT zijianzhu psoaidedinversedesignofsiliconmodulator AT yingxuanzhao psoaidedinversedesignofsiliconmodulator AT zhensheng psoaidedinversedesignofsiliconmodulator AT fuwangan psoaidedinversedesignofsiliconmodulator |