n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in wa...
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| Format: | Article |
| Language: | English |
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Wiley
2003-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.26.11 |
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| author | Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw |
| author_facet | Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw |
| author_sort | Hikmat S. Hilal |
| collection | DOAJ |
| description | Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII
and MnII
mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n
-GaAs wafers. The n-GaAs/polymer/MnP
system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64−
system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water. |
| format | Article |
| id | doaj-art-67687f0018da48c28d9a575dd8294b26 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2003-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-67687f0018da48c28d9a575dd8294b262025-02-03T01:01:22ZengWileyActive and Passive Electronic Components0882-75161563-50312003-01-01261112110.1155/APEC.26.11n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane MatricesHikmat S. Hilal0Moayyad Masoud1Samar Shakhshir2Najeh Jisraw3Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityTetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.http://dx.doi.org/10.1155/APEC.26.11 |
| spellingShingle | Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices Active and Passive Electronic Components |
| title | n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
| title_full | n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
| title_fullStr | n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
| title_full_unstemmed | n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
| title_short | n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
| title_sort | n gaas band edge repositioning by modification with metalloporphyrin polysiloxane matrices |
| url | http://dx.doi.org/10.1155/APEC.26.11 |
| work_keys_str_mv | AT hikmatshilal ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT moayyadmasoud ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT samarshakhshir ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT najehjisraw ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices |