Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascale...
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2024-12-01
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| author | Khalil Tamersit Abdellah Kouzou José Rodriguez Mohamed Abdelrahem |
| author_facet | Khalil Tamersit Abdellah Kouzou José Rodriguez Mohamed Abdelrahem |
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| description | Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum transport equation under the ballistic transport regime. The performance evaluation includes analysis of the transfer characteristics, subthreshold swing, on-state and off-state currents, current ratio, and scaling limits. Simulation results demonstrate that the investigated VGD TMD FET, featuring a gate-all-around (GAA) configuration, a TMD-based channel, and a thin vacuum gate dielectric, collectively compensates for the low dielectric constant of the VGD, enabling exceptional electrostatic control. This combination ensures superior switching performance in the ultrascaled regime, achieving a high current ratio and steep subthreshold characteristics. These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics. |
| format | Article |
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| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
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| series | Micromachines |
| spelling | doaj-art-671efc2abe5d4e2d983da9fdb7cb37782025-01-24T13:41:54ZengMDPI AGMicromachines2072-666X2024-12-011613310.3390/mi16010033Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation EnvironmentsKhalil Tamersit0Abdellah Kouzou1José Rodriguez2Mohamed Abdelrahem3National School of Nanoscience and Nanotechnology, Abdelhafid Ihaddaden Scientific and Technological Hub, Sidi Abdellah, Algiers 16000, AlgeriaApplied Automation and Industrial Diagnosis Laboratory (LAADI), Faculty of Science and Technology, Djelfa University, Djelfa 17000, AlgeriaCenter for Energy Transition, Universidad San Sebastián, Santiago 8420524, ChileHigh-Power Converter Systems (HLU), Technical University of Munich (TUM), 80333 Munich, GermanyGate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum transport equation under the ballistic transport regime. The performance evaluation includes analysis of the transfer characteristics, subthreshold swing, on-state and off-state currents, current ratio, and scaling limits. Simulation results demonstrate that the investigated VGD TMD FET, featuring a gate-all-around (GAA) configuration, a TMD-based channel, and a thin vacuum gate dielectric, collectively compensates for the low dielectric constant of the VGD, enabling exceptional electrostatic control. This combination ensures superior switching performance in the ultrascaled regime, achieving a high current ratio and steep subthreshold characteristics. These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics.https://www.mdpi.com/2072-666X/16/1/33transition metal dichalcogenide (TMD)vacuum gate dielectric (VGD)field-effect transistors (FETs)non-equilibrium green’s function (NEGF)subthreshold swing (SS)current ratio |
| spellingShingle | Khalil Tamersit Abdellah Kouzou José Rodriguez Mohamed Abdelrahem Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments Micromachines transition metal dichalcogenide (TMD) vacuum gate dielectric (VGD) field-effect transistors (FETs) non-equilibrium green’s function (NEGF) subthreshold swing (SS) current ratio |
| title | Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments |
| title_full | Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments |
| title_fullStr | Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments |
| title_full_unstemmed | Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments |
| title_short | Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments |
| title_sort | performance assessment of ultrascaled vacuum gate dielectric mos sub 2 sub field effect transistors avoiding oxide instabilities in radiation environments |
| topic | transition metal dichalcogenide (TMD) vacuum gate dielectric (VGD) field-effect transistors (FETs) non-equilibrium green’s function (NEGF) subthreshold swing (SS) current ratio |
| url | https://www.mdpi.com/2072-666X/16/1/33 |
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