Tamersit, K., Kouzou, A., Rodriguez, J., & Abdelrahem, M. Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. MDPI AG.
Chicago Style (17th ed.) CitationTamersit, Khalil, Abdellah Kouzou, José Rodriguez, and Mohamed Abdelrahem. Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. MDPI AG.
MLA (9th ed.) CitationTamersit, Khalil, et al. Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. MDPI AG.
Warning: These citations may not always be 100% accurate.