Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas
In this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer. The model predicts the vertical electric field in the device, especially at the interface of AlGaN and G...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Amirkabir University of Technology
2024-07-01
|
| Series: | AUT Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | https://eej.aut.ac.ir/article_5406_7ae08338fd2171bd745bc3f708c6d6eb.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!