DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs c...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/95230 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
(NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The
negative differential resistance (NDR) resulted from the observation of the hot electron real
space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier
mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency
operation. For DC performance, the largest peak-to-valley current ratio of the device is about
5 at room temperature. For AC performance, S-parameter measurements of high frequency
and microwave characteristics indicate a projected maximum frequency of oscillation of
fmax=2.7GHz and a current gain cutoff frequency (fT) occurs at 1.8GHz. |
|---|---|
| ISSN: | 0882-7516 1563-5031 |