Mosaic Structure of GaN Film Grown on Sapphire Substrate by AP-MOCVD: Impact of Thermal Annealing on the Tilt and Twist Angles

Mosaic Structure of GaN Film Grown on Sapphire Substrate by AP-MOCVD: Impact of Thermal Annealing on the Tilt and Twist Angles

A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. High-resolution X-ray diffraction (H...

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Bibliographic Details
Main Authors: J. Laifi, M. F. Hasaneen, H. Bouazizi, Fatimah Hafiz Alsahli, T. A. Lafford, A. Bchetnia
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Crystals
Subjects:
GaN
crystal structure
x-ray diffraction
thermal annealing
Online Access:https://www.mdpi.com/2073-4352/15/1/97
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